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BUZ100 の電気的特性と機能

BUZ100のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ100
部品説明 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated d v/d t rated)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ100 Datasheet, BUZ100 PDF,ピン配置, 機能
BUZ 100
SIPMOS ® Power Transistor
• N channel
• Enhancement mode
• Avalanche-rated
• dv/dt rated
• Ultra low on-resistance
• 175°C operating temperature
• also in TO-220 SMD available
Type
BUZ 100
VDS
50 V
ID
60 A
RDS(on)
0.018
Maximum Ratings
Parameter
Continuous drain current
TC = 101 °C
Pulsed drain current
TC = 25 °C
Avalanche energy, single pulse
ID = 60 A, VDD = 25 V, RGS = 25
L = 70 µH, Tj = 25 °C
Reverse diode dv/dt
IS = 60 A, VDS = 40 V, diF/dt = 200 A/µs
Tjmax = 175 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Pin 1
G
Pin 2
D
Pin 3
S
Package
TO-220 AB
Ordering Code
C67078-S1348-A2
Symbol
ID
IDpuls
EAS
dv/dt
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Values
60
Unit
A
240
mJ
250
kV/µs
6
± 20
250
-55 ... + 175
-55 ... + 175
0.6
75
E
55 / 175 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

1 Page





BUZ100 pdf, ピン配列
BUZ 100
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 60 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
25
-
-
-
-
-
-
-
39 -
2400 3200
800 1200
300 450
40 60
100 150
250 335
140 190
Unit
S
pF
ns
Semiconductor Group
3
07/96


3Pages


BUZ100 電子部品, 半導体
BUZ 100
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
140 Ptot = 250W
A
l
kj i
120
ID 110
100
h
VGS [V]
a 4.0
gb
c
4.5
5.0
90 d 5.5
f e 6.0
80
f 6.5
70 g 7.0
60
eh
7.5
i 8.0
50 j 9.0
d
40 k 10.0
l 20.0
30 c
20
10 b
0a
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 V
VDS
5.0
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
60
A
50
ID
45
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.055
ab c d e
RDS
0.045
(on)
0.040
0.035
0.030
0.025
0.020
0.015
f
g
h
i
0.010
j
VGS [V] =
0.005 a b c d e f
45.05 5.5 6.0 6.5 7.0 7.5
0.000
ghi j
8.0 9.0 10.0 20.0
0 20 40 60 80 A
ID
120
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
40
S
gfs
30
25
20
15
10
5
0
0 10 20 30 40 A 60
ID
Semiconductor Group
6
07/96

6 Page



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共有リンク

Link :


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