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BUZ10 の電気的特性と機能

BUZ10のメーカーはSiemens Semiconductor Groupです、この部品の機能は「SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)」です。


製品の詳細 ( Datasheet PDF )

部品番号 BUZ10
部品説明 SIPMOS Power Transistor (N channel Enhancement mode Avalanche-rated)
メーカ Siemens Semiconductor Group
ロゴ Siemens Semiconductor Group ロゴ 




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BUZ10 Datasheet, BUZ10 PDF,ピン配置, 機能
SIPMOS ® Power Transistor
BUZ 10
Not for new design
• N channel
• Enhancement mode
• Avalanche-rated
Pin 1
G
Pin 2
D
Pin 3
S
Type
BUZ 10
VDS
50 V
ID
23 A
RDS(on)
0.07
Maximum Ratings
Parameter
Continuous drain current
TC = 26 °C
Pulsed drain current
TC = 25 °C
Avalanche current,limited by Tjmax
Avalanche energy,periodic limited by Tjmax
Avalanche energy, single pulse
ID = 23 A, VDD = 25 V, RGS = 25
L = 15.1 µH, Tj = 25 °C
Gate source voltage
Power dissipation
TC = 25 °C
Operating temperature
Storage temperature
Thermal resistance, chip case
Thermal resistance, chip to ambient
DIN humidity category, DIN 40 040
IEC climatic category, DIN IEC 68-1
Package
TO-220 AB
Symbol
ID
IDpuls
IAR
EAR
EAS
VGS
Ptot
Tj
Tstg
RthJC
RthJA
Ordering Code
C67078-S1300-A2
Values
23
92
23
1.3
Unit
A
mJ
8
± 20
75
-55 ... + 150
-55 ... + 150
1.67
75
E
55 / 150 / 56
V
W
°C
K/W
Semiconductor Group
1
07/96

1 Page





BUZ10 pdf, ピン配列
BUZ 10
Not for new design
Electrical Characteristics, at Tj = 25°C, unless otherwise specified
Parameter
Symbol
min.
Values
typ. max.
Dynamic Characteristics
Transconductance
VDS2 * ID * RDS(on)max, ID = 14 A
Input capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Output capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Reverse transfer capacitance
VGS = 0 V, VDS = 25 V, f = 1 MHz
Turn-on delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Rise time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Turn-off delay time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
Fall time
VDD = 30 V, VGS = 10 V, ID = 3 A
RGS = 50
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
7
-
-
-
-
-
-
-
13 -
650 820
300 450
110 170
20 35
40 65
80 110
60 75
Unit
S
pF
ns
Semiconductor Group
3
07/96


3Pages


BUZ10 電子部品, 半導体
BUZ 10
Not for new design
Typ. output characteristics
ID = ƒ(VDS)
parameter: tp = 80 µs
55 Ptot = 75W
A
ID 45
40
l kj
i
35
30
25
20
15
10
VGS [V]
h a 4.0
b 4.5
gc
d
5.0
5.5
e 6.0
f
f 6.5
g 7.0
e h 7.5
i 8.0
j 9.0
d
k 10.0
l 20.0
c
5b
0a
0.0 1.0 2.0 3.0 4.0 5.0 V 6.5
VDS
Typ. transfer characteristics ID = f (VGS)
parameter: tp = 80 µs
VDS2 x ID x RDS(on)max
55
A
45
ID
40
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8 V 10
VGS
Typ. drain-source on-resistance
RDS (on) = ƒ(ID)
parameter: VGS
0.22
a
bc
def
g
RDS
0.18
(on)
0.16
0.14
0.12
0.10
0.08
h
0.06
i
j
0.04
k
VGS [V] =
0.02 a b c d e f
4.05 5.0 5.5 6.0 6.5 7.0
0.00
ghi j k
7.5 8.0 9.0 10.0 20.0
0 5 10 15 20 25 30 35 40 A 50
ID
Typ. forward transconductance gfs = f (ID)
parameter: tp = 80 µs,
VDS2 x ID x RDS(on)max
20
S
gfs 16
14
12
10
8
6
4
2
0
0 5 10 15 20 25 30 35 40 A 50
ID
Semiconductor Group
6
07/96

6 Page



ページ 合計 : 9 ページ
 
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共有リンク

Link :


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