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BUP314SのメーカーはSiemens Semiconductor Groupです、この部品の機能は「IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated)」です。 |
部品番号 | BUP314S |
| |
部品説明 | IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated) | ||
メーカ | Siemens Semiconductor Group | ||
ロゴ | |||
このページの下部にプレビューとBUP314Sダウンロード(pdfファイル)リンクがあります。 Total 7 pages
BUP 314S
Preliminary data
IGBT
• High switching speed
• Very low switching losses
• Low tail current
• Latch-up free
• Avalanche rated
Type
BUP 314S
VCE IC
1200V 25A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Avalanche energy, single pulse
IC = 25 A, VCC = 50 V, RGE = 25 Ω
L = 200 µH, Tj = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
EAS
Ptot
Tj
Tstg
Pin 1
G
Pin 2
C
Pin 3
E
Ordering Code
C67040-A4207-A2
Values
1200
Unit
V
1200
± 20
25
17
A
50
34
mJ
65
300
-55 ... + 150
-55 ... + 150
W
°C
Semiconductor Group
1
Feb-07-1997
1 Page AC Characteristics
Transconductance
VCE = 20 V, IC = 15 A
Input capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
BUP 314S
Preliminary data
gfs
Ciss
Coss
Crss
8.5
-
-
-
12
1950
-
2600
S
pF
180 270
120 180
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Values
min.
typ.
max.
Switching Characteristics, Inductive Load at Tj = 125 °C
Turn-on delay time
td(on)
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 47 Ω
-
Rise time
tr
VCC = 600 V, VGE = 15 V, IC = 15 A
RGon = 47 Ω
-
Turn-off delay time
td(off)
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 47 Ω
-
Fall time
tf
VCC = 600 V, VGE = -15 V, IC = 15 A
RGoff = 47 Ω
-
65
60
420
70
100
90
560
95
Unit
ns
Semiconductor Group
3
Feb-07-1997
3Pages BUP 314S
Preliminary data
Typ. switching time
t = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 47Ω
10 3
t
ns
tdoff
10 2 tr
tdon
tf
Typ. switching time
t = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A
10 4
ns
t
10 3
tdoff
tdon
10 2
tr
tf
10 1
0
5 10 15 20 25 30 A 40
IC
10 1
0
20 40 60 80 100 120 140 160 Ω 200
RG
Typ. switching losses
E = f (IC) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, RG = 48.9Ω
8.0
Typ. switching losses
E = f (RG) , inductive load , Tj = 125°C
par.: VCE = 600 V, VGE = ± 15 V, IC = 15 A
8.0
mWs
E
6.0
5.0
mWs
E
6.0
Eon
5.0
4.0 4.0 Eon
3.0 3.0
2.0
Eoff
1.0
0.0
0 5 10 15 20 25 30 A 40
IC
2.0
Eoff
1.0
0.0
0 20 40 60 80 100 120 140 160 Ω 200
RG
Semiconductor Group
6
Feb-07-1997
6 Page | |||
ページ | 合計 : 7 ページ | ||
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PDF ダウンロード | [ BUP314S データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
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BUP314S | IGBT (High switching speed Very low switching losses Low tail current Latch-up free Avalanche rated) | Siemens Semiconductor Group |