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PDF BUP305 Data sheet ( Hoja de datos )
| Número de pieza | BUP305 | |
| Descripción | IGBT With Antiparallel Diode (Low forward voltage drop High switching speed Low tail current Latch-up free Including fast free-wheel diode) | |
| Fabricantes | Siemens Semiconductor Group | |
| Logotipo |  |
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BUP 305 D
IGBT With Antiparallel Diode
Preliminary data
• Low forward voltage drop
• High switching speed
• Low tail current
• Latch-up free
• Including fast free-wheel diode
Type
BUP 305 D
VCE IC
1200V 12A
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-gate voltage
RGE = 20 kΩ
Gate-emitter voltage
DC collector current
TC = 25 °C
TC = 90 °C
Pulsed collector current, tp = 1 ms
TC = 25 °C
TC = 90 °C
Diode forward current
TC = 90 °C
Pulsed diode current, tp = 1 ms
TC = 25 °C
Power dissipation
TC = 25 °C
Chip or operating temperature
Storage temperature
Package
TO-218 AB
Symbol
VCE
VCGR
VGE
IC
ICpuls
IF
IFpuls
Ptot
Tj
Tstg
Pin 1 Pin 2 Pin 3
GCE
Ordering Code
Q67040-A4225-A2
Values
1200
Unit
V
1200
± 20
12
8
A
24
16
8
48
100
-55 ... + 150
-55 ... + 150
W
°C
Semiconductor Group
1
Dec-02-1996
1 page  
Typ. output characteristics
IC = f(VCE)
parameter: tp = 80 µs, Tj = 125 °C
BUP 305 D
Typ. transfer characteristics
IC = f (VGE)
parameter: tP = 80 µs, VCE = 20 V, Tj = 25 °C
Typ. saturation characteristics
VCE(sat) = f (VGE)
parameter: Tj = 25 °C
Typ. saturation characteristics
VCE(sat) = f (VGE)
parameter: Tj = 125 °C
Semiconductor Group
5
Dec-02-1996
5 Page | ||
| Páginas | Total 7 Páginas | |
| PDF Descargar | [ Datasheet BUP305.PDF ] | |
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