|
|
BYV72EW-200のメーカーはNXP Semiconductorsです、この部品の機能は「Rectifier diodes ultrafast/ rugged」です。 |
部品番号 | BYV72EW-200 |
| |
部品説明 | Rectifier diodes ultrafast/ rugged | ||
メーカ | NXP Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBYV72EW-200ダウンロード(pdfファイル)リンクがあります。 Total 6 pages
Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
FEATURES
• Low forward volt drop
• Fast switching
• Soft recovery characteristic
• Reverse surge capability
• High thermal cycling performance
• Low thermal resistance
SYMBOL
a1
1
k2
a2
3
GENERAL DESCRIPTION
Dual, ultra-fast, epitaxial rectifier
diodes intended for use as output
rectifiers in high frequency switched
mode power supplies.
The BYV72EW series is supplied in
the conventional leaded SOT429
(TO247) package.
PINNING
PIN DESCRIPTION
1 anode 1
2 cathode
3 anode 2
tab cathode
QUICK REFERENCE DATA
VR = 150 V/ 200 V
VF ≤ 0.85 V
IO(AV) = 30 A
IRRM = 0.2 A
trr ≤ 28 ns
SOT429 (TO247)
1 23
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
Peak repetitive reverse voltage
Crest working reverse voltage
Continuous reverse voltage
Tmb ≤ 144˚C
BYV72EW
IO(AV)
IFRM
IFSM
IRRM
IRSM
Tstg
Tj
Average rectified output current square wave
(both diodes conducting)1
δ = 0.5; Tmb ≤ 104 ˚C
Repetitive peak forward current t = 25 µs; δ = 0.5;
per diode
Non-repetitive peak forward
Tmb ≤ 104 ˚C
t = 10 ms
current per diode
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
Repetitive peak reverse current tp = 2 µs; δ = 0.001
per diode
Non-repetitive peak reverse
current per diode
tp = 100 µs
Storage temperature
Operating junction temperature
1 Neglecting switching and reverse current losses.
-
-
-
-
-
-
-
-
-
-40
-
ESD LIMITING VALUE
SYMBOL PARAMETER
VC Electrostatic discharge
capacitor voltage
CONDITIONS
Human body model;
C = 250 pF; R = 1.5 kΩ
MAX.
-150
150
150
150
-200
200
200
200
30
30
150
160
UNIT
V
V
V
A
A
A
A
0.2 A
0.2 A
150 ˚C
150 ˚C
MIN.
-
MAX.
8
UNIT
kV
October 1998
1
Rev 1.200
1 Page Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
I
F
dI
F
dt
t
rr
time
Q
s
I
R
I
rrm
10% 100%
Fig.1. Definition of trr1, Qs and Irrm
0.5A
IF
0A
I rec = 0.25A
IR
trr2
I = 1A
R
Fig.4. Definition of trr2
IF
time
VF
VF
Fig.2. Definition of Vfr
V fr
time
R
Voltage Pulse Source
D.U.T.
Current
shunt
to ’scope
Fig.3. Circuit schematic for trr2
PF / W
20
Vo = 0.705 V
Rs = 0.0097 Ohms
15
10 0.1
BYV42
0.5
0.2
Tmb(max) / C
102
D = 1.0
114
126
5
I
tp
D
=
tp
T
138
Tt
0 150
0 5 10 15 20 25
IF(AV) / A
Fig.5. Maximum forward dissipation PF = f(IF(AV)) per
diode; square current waveform where
IF(AV) =IF(RMS) x √D.
PF / W
15
Vo = 0.705 V
Rs = 0.0097 Ohms
10
BYV42
2.2
2.8
4
Tmb(max) / C
114
a = 1.57
1.9
126
5 138
0 150
0 5 10 15
IF(AV) / A
Fig.6. Maximum forward dissipation PF = f(IF(AV)) per
diode; sinusoidal current waveform where a = form
factor = IF(RMS) / IF(AV).
October 1998
3
Rev 1.200
3Pages Philips Semiconductors
Rectifier diodes
ultrafast, rugged
Product specification
BYV72EW series
DEFINITIONS
Data sheet status
Objective specification This data sheet contains target or goal specifications for product development.
Preliminary specification This data sheet contains preliminary data; supplementary data may be published later.
Product specification This data sheet contains final product specifications.
Limiting values
Limiting values are given in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one
or more of the limiting values may cause permanent damage to the device. These are stress ratings only and
operation of the device at these or at any other conditions above those given in the Characteristics sections of
this specification is not implied. Exposure to limiting values for extended periods may affect device reliability.
Application information
Where application information is given, it is advisory and does not form part of the specification.
© Philips Electronics N.V. 1998
All rights are reserved. Reproduction in whole or in part is prohibited without the prior written consent of the
copyright owner.
The information presented in this document does not form part of any quotation or contract, it is believed to be
accurate and reliable and may be changed without notice. No liability will be accepted by the publisher for any
consequence of its use. Publication thereof does not convey nor imply any license under patent or other
industrial or intellectual property rights.
LIFE SUPPORT APPLICATIONS
These products are not designed for use in life support appliances, devices or systems where malfunction of these
products can be reasonably expected to result in personal injury. Philips customers using or selling these products
for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting
from such improper use or sale.
October 1998
6
Rev 1.200
6 Page | |||
ページ | 合計 : 6 ページ | ||
|
PDF ダウンロード | [ BYV72EW-200 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BYV72EW-200 | Rectifier diodes ultrafast/ rugged | NXP Semiconductors |