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PDF BYT62 Data sheet ( Hoja de datos )
| Número de pieza | BYT62 | |
| Descripción | Silicon Mesa Rectifier | |
| Fabricantes | Vishay Telefunken | |
| Logotipo |  |
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Silicon Mesa Rectifier
Features
D Glass passivated junction
D Hermetically sealed package
D Controlled avalanche characteristic
D Low reverse current
BYT62
Vishay Telefunken
Applications
High voltage rectifier
94 9539
Absolute Maximum Ratings
Tj = 25_C
Parameter
Test Conditions
Reverse voltage
=Repetitive peak reverse voltage
Peak forward surge current
Average forward current
Non repetitive reverse
avalanche energy
xtp=10ms, half sinewave
Tamb=25°C, RthJA 60K/W
I(BR)R=1A, inductive load
Junction temperature
Storage temperature range
Maximum Thermal Resistance
Tj = 25_C
Parameter
Junction ambient
Test Conditions
l=10mm, TL=constant
Electrical Characteristics
Tj = 25_C
Parameter
Forward voltage
Reverse current
Reverse breakdown voltage
Reverse recovery time
Test Conditions
IF=200mA
IF=1A
IF=1A, Tj=175°C
IF=1A, Tj=–40°C
VR=VRRM
VR=VRRM, Tj=175°C
VR=VRRM, Tj=–40°C
IR=100mA
IF=0.5A, IR=1A, iR=0.25A
Type
Type
Symbol
VR
=VRRM
IFSM
IFAV
ER
Value
2400
10
350
60
Unit
V
A
mA
mJ
Tj 175 °C
Tstg –55...+190 °C
Symbol
RthJA
Value
60
Unit
K/W
Symbol Min Typ Max Unit
VF
VF
VF
VF
IR
IR
IR
V(BR)R
trr
2500
3.0 V
3.6 V
2.9 V
4.0 V
5 mA
250 mA
400 nA
V
5 ms
Document Number 86033
Rev. 2, 24-Jun-98
www.vishay.de • FaxBack +1-408-970-5600
1 (3)
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BYT62.PDF ] | |
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