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Número de pieza | BYQ28-200 | |
Descripción | Rectifier diodes ultrafast | |
Fabricantes | NXP Semiconductors | |
Logotipo | ||
Hay una vista previa y un enlace de descarga de BYQ28-200 (archivo pdf) en la parte inferior de esta página. Total 6 Páginas | ||
No Preview Available ! Philips Semiconductors
Rectifier diodes
ultrafast
Product specification
BYQ28X series
GENERAL DESCRIPTION
Glass passivated dual epitaxial
rectifier diodes in a full pack plastic
envelope, featuring low forward
voltage drop, ultra-fast recovery
times and soft recovery
characteristic. They are intended for
use in switched mode power supplies
and high frequency circuits in general
where low conduction and switching
losses are essential.
QUICK REFERENCE DATA
SYMBOL PARAMETER
VRRM
VF
IO(AV)
trr
BYQ28X-
Repetitive peak reverse
voltage
Forward voltage
Output current (both
diodes conducting)
Reverse recovery time
MAX.
100
100
0.895
10
25
MAX.
150
150
0.895
10
25
MAX.
200
200
0.895
10
25
UNIT
V
V
A
ns
PINNING - SOT186A
PIN DESCRIPTION
1 anode 1 (a)
2 cathode (k)
3 anode 2 (a)
case isolated
PIN CONFIGURATION
case
12 3
SYMBOL
a1 a2
13
k2
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER
CONDITIONS
MIN.
VRRM
VRWM
VR
IO(AV)
IO(RMS)
IFRM
IFSM
I2t
Tstg
Tj
Repetitive peak reverse voltage
Crest working reverse voltage
Continuous reverse voltage1
Output current (both diodes
conducting)2
RMS forward current
Repetitive peak forward current
per diode
Non-repetitive peak forward
current per diode
I2t for fusing
Storage temperature
Operating junction temperature
square wave
δ = 0.5; Ths ≤ 92 ˚C
sinusoidal
a = 1.57; Ths ≤ 95 ˚C
t = 25 µs; δ = 0.5;
Ths ≤ 92 ˚C
t = 10 ms
t = 8.3 ms
sinusoidal; with reapplied
VRWM(max)
t = 10 ms
-
-
-
-
-
-
-
-
-
-
-40
-
-100
100
100
100
MAX.
-150
150
150
150
10
9
14
10
50
55
12.5
150
150
-200
200
200
200
UNIT
V
V
V
A
A
A
A
A
A
A2s
˚C
˚C
1 Ths ≤ 148˚C for thermal stability.
2 Neglecting switching and reverse current losses
August 1996
1
Rev 1.000
1 page Philips Semiconductors
Rectifier diodes
ultrafast
MECHANICAL DATA
Dimensions in mm
Net Mass: 2 g
Recesses (2x)
2.5
0.8 max. depth
10.3
max
3.2
3.0
3 max.
not tinned
13.5
min.
0.4 M
12 3
5.08
4.6
max
2.9 max
2.8
15.8 19
max. max.
seating
plane
6.4
15.8
max
3
2.5
0.6
2.54 0.5
2.5
Product specification
BYQ28X series
1.0 (2x)
0.9
0.7
1.3
Fig.12. SOT186A; The seating plane is electrically isolated from all terminals.
Notes
1. Refer to mounting instructions for F-pack envelopes.
2. Epoxy meets UL94 V0 at 1/8".
August 1996
5
Rev 1.000
5 Page |
Páginas | Total 6 Páginas | |
PDF Descargar | [ Datasheet BYQ28-200.PDF ] |
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BYQ28-200 | Rectifier diodes ultrafast | NXP Semiconductors |
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