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IXDD504 の電気的特性と機能

IXDD504のメーカーはIXYSです、この部品の機能は「4 Ampere Dual Low-Side Ultrafast MOSFET Drivers」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXDD504
部品説明 4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
メーカ IXYS
ロゴ IXYS ロゴ 




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IXDD504 Datasheet, IXDD504 PDF,ピン配置, 機能
IXDD504/ IXDE504
4 Ampere Dual Low-Side Ultrafast MOSFET Drivers
with Enable for fast, controlled shutdown
Features
• Built using the advantages and compatibility
of CMOS and IXYS HDMOSTM processes
• Latch-Up Protected up to 4 Amps
• High 4A Peak Output Current
• Wide Operating Range: 4.5V to 30V
-55°C to +125°C Extended Operating
Temperature
• Ability to Disable Output under Faults
• High Capacitive Load
Drive Capability: 1800pF in <15ns
• Matched Rise And Fall Times
• Low Propagation Delay Time
• Low Output Impedance
• Low Supply Current
• Two Drivers in a Single Package
Applications
• Limiting di/dt under Short Circuit
• Driving MOSFETs and IGBTs
• Motor Controls
• Line Drivers
• Pulse Generators
• Local Power ON/OFF Switch
• Switch Mode Power Supplies (SMPS)
• DC to DC Converters
• Pulse Transformer Driver
• Class D Switching Amplifiers
• Power Charge Pumps
General Description
The IXDD504 and IXDE504 each consist of two 4-Amp
CMOS high speed MOSFET gate drivers for driving the
latest IXYS MOSFETs & IGBTs. Each of the dual outputs
can source and sink 4 Amps of peak current while produc-
ing voltage rise and fall times of less than 15ns. The input
of each driver is TTL or CMOS compatible and is virtually
immune to latch up. Patented* design innovations eliminate
cross conduction and current "shoot-through". Improved
speed and drive capabilities are further enhanced by fast,
matched rise and fall times.
Additionally, each IXDD504 or IXDE504 driver incorporates a
unique ability to disable the output under fault conditions.
When a logical low is forced into the Enable input of a
driver, both of it's final output stage MOSFETs (NMOS and
PMOS) are turned off. As a result, the respective output of
the IXDD504 enters a tristate mode and, with additional
cicuitry, achieves a soft turn-off of the MOSFET/IGBT when
a short circuit is detected. This helps prevent damage that
could occur to the MOSFET/IGBT if it were to be switched
off abruptly due to a dv/dt over-voltage transient.
The IXDD504 and IXDE504 are each available in the 8-Pin
P-DIP (PI) package, the 8-Pin SOIC (SIA) package, and the
8-Lead DFN (D2) package, (which occupies less than 65%
of the board area of the 8-Pin SOIC).
*United States Patent 6,917,227
Ordering Information
Part Number
Description
IXDD504PI
IXDD504SIA
IXDD504SIAT/R
IXDD504D2
IXDD504D2T/R
IXDE504PI
IXDE504SIA
IXDE504SIAT/R
IXDE504D2
IXDE504D2T/R
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
4A Low Side Gate Driver I.C.
Package
Type
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
8-Lead DFN
8-Lead DFN
8-Pin PDIP
8-Pin SOIC
8-Pin SOIC
8-Lead DFN
8-Lead DFN
Packing Style
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Tube
Tube
13” Tape and Reel
2” x 2” Waffle Pack
13” Tape and Reel
Pack
Qty
50
94
2500
56
2500
50
94
2500
56
2500
Configuration
Dual Non-
Inverting
Drivers with
Enable
Dual Inverting
Drivers
Inverting with
Enable
NOTE: All parts are lead-free and RoHS Compliant
Copyright © 2007 IXYS CORPORATION All rights reserved
First Release
DS99568A(10/07)

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IXDD504 pdf, ピン配列
IXDD504 / IXDE504
Absolute Maximum Ratings (1)
Parameter
Supply Voltage
All Other Pins (unless specified
otherwise)
Junction Temperature
Storage Temperature
Lead Temperature (10 Sec)
Value
35 V
-0.3 V to VCC + 0.3V
150 °C
-65 °C to 150 °C
300 °C
Operating Ratings (2)
Parameter
Value
Operating Supply Voltage
4.5V to 30V
Operating Temperature Range
-55 °C to 125 °C
Package Thermal Resistance *
8-PinPDIP
8-PinSOIC
8-Lead DFN
8-Lead DFN
8-Lead DFN
(PI)
(SIA)
(D2)
(D2)
(D2)
θJ-A (typ) 125 °C/W
θJ-A(typ) 200 °C/W
θJ-A(typ) 125-200 °C/W
θJ-C(max) 2.1 °C/W
θJ-S(typ) 6.4 °C/W
Electrical Characteristics @ TA = 25 oC (3)
Unless otherwise noted, 4.5V VCC 30V .
All voltage measurements with respect to GND. IXD_504 configured as described in Test Conditions. All specifications are for one channel.
Symbol Parameter
Test Conditions
(4)
Min Typ Max Units
VIH, VENH
VIL, VENL
VIN
VEN
IIN
VOH
VOL
ROH
ROL
IPEAK
IDC
tR
tF
tONDLY
tOFFDLY
tENOH
tDOLD
VCC
REN
ICC
High input & EN voltage
Low input & EN voltage
Input voltage range
Enable voltage range
Input current
High output voltage
Low output voltage
High state output resistance
Low state output resistance
Peak output current
Continuous output current
Rise time
Fall time
On-time propagation delay
Off-time propagation delay
Enable to output high delay time
Disable to high impedance state
delay time
Power supply voltage
Enable Pull-up Resistor
Power supply current
4.5V VIN 18V
4.5V VIN 18V
0V VIN VCC
VCC = 18V
IOUT = 10mA
VCC = 18V
IOUT = 10mA
VCC = 15V
Limited by package
dissipation
CLOAD =1000pF
VCC =18V
CLOAD =1000pF
VCC =18V
CLOAD =1000pF
VCC =18V
CLOAD =1000pF
VCC =18V
VCC = 18V, VIN = 0V
VIN = 3.5V
VIN = VCC
3
-5
- 0.3
-10
VCC - 0.025
4.5
0.8
VCC + 0.3
VCC + 0.3
10
0.025
1.5 2.5
1.2 2.0
4
1
9 16
8 14
19 40
18 35
15 30
63 100
18 30
200
20
13
20
V
V
V
V
µA
V
V
A
A
ns
ns
ns
ns
ns
ns
V
k
µA
mA
mA
IXYS reserves the right to change limits, test conditions, and dimensions.
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IXDD504 電子部品, 半導体
Fig. 4
90
80
70
60
50
40
30
20
10
0
0
IXDD504 / IXDE504
Typical Performance Characteristics
Rise Times vs. Supply Voltage
Fig. 5
Fall Time vs. Supply Voltage
80
70
60
10000pF
5400pF
1000pF
100pF
5 10 15 20 25 30 35
Supply Voltage (V)
50
10000pF
40
30
20 5400pF
10
0
0
1000pF
100pF
5 10 15 20 25 30 35
Supply Voltage (V)
Fig. 6
10
Rise / Fall Time vs. Temperature
VSUPPLY = 15V CLOAD = 1000pF
9
8
7
6
5
4
3
2
1
0
-50 -30 -10 10 30 50 70 90 110 130 150
Fig. 8
Temperature (C)
Fall Time vs. Capacitive Load
70
60 5V
50
15V
30V
40
30
20
10
0
100
1000 10000
Load Capacitance (pF)
Fig. 7
70
60
Rise Time vs. Capacitive Load
5V
50 15V
30V
40
30
20
10
0
100 1000 10000
Load Capacitance (pF)
Fig. 9
Input Threshold Levels vs. Supply Voltage
2.5
2
Positive going input
1.5
Negative going input
1
0.5
0
0 5 10 15 20 25 30 35
Supply Voltage (V)
Copyright © 2007 IXYS CORPORATION All rights reserved
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部品番号部品説明メーカ
IXDD504

4 Ampere Dual Low-Side Ultrafast MOSFET Drivers

IXYS
IXYS


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