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PDF IXTY2N100P Data sheet ( Hoja de datos )
| Número de pieza | IXTY2N100P | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA2N100P
IXTP2N100P
IXTY2N100P
VDSS =
ID25 =
≤RDS(on)
1000V
2.0A
7.5Ω
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, VDD ≤ VDSS, TJ ≤ 150°C
TC = 25°C
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque (TO-220)
TO-263
TO-220
TO-252
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 100μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 • ID25, Note 1
Maximum Ratings
1000
1000
±20
±30
2.0
5.0
2.0
150
V
V
V
V
A
A
A
mJ
10
86
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.50
3.00
0.35
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Characteristic Values
Min. Typ. Max.
1000
V
2.5 4.5 V
±50 nA
5 μA
250 μA
6.0 7.5 Ω
GS
TO-220 (IXTP)
(TAB)
G DS
TO-252 (IXTY)
(TAB)
G
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching
(UIS) rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor controls
z Robotics and servo controls
© 2008 IXYS CORPORATION, All rights reserved
DS99817B(04/08)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXTY2N100P.PDF ] | |
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