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IXTA2N100P の電気的特性と機能

IXTA2N100PのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXTA2N100P
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXTA2N100P Datasheet, IXTA2N100P PDF,ピン配置, 機能
PolarTM
Power MOSFET
N-Channel Enhancement Mode
Avalanche Rated
IXTA2N100P
IXTP2N100P
IXTY2N100P
VDSS =
ID25 =
RDS(on)
1000V
2.0A
7.5Ω
TO-263 (IXTA)
Symbol
VDSS
VDGR
VGSS
VGSM
ID25
IDM
IA
EAS
dV/dt
PD
TJ
TJM
Tstg
TL
TSOLD
Md
Weight
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGS = 1MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, VDD VDSS, TJ 150°C
TC = 25°C
1.6mm (0.062) from case for 10s
Plastic body for 10s
Mounting torque (TO-220)
TO-263
TO-220
TO-252
Symbol
Test Conditions
(TJ = 25°C, unless otherwise specified)
BVDSS
VGS = 0V, ID = 250μA
VGS(th)
VDS = VGS, ID = 100μA
IGSS VGS = ±20V, VDS = 0V
IDSS
VDS = VDSS
VGS = 0V
TJ = 125°C
RDS(on)
VGS = 10V, ID = 0.5 ID25, Note 1
Maximum Ratings
1000
1000
±20
±30
2.0
5.0
2.0
150
V
V
V
V
A
A
A
mJ
10
86
-55 ... +150
150
-55 ... +150
300
260
1.13 / 10
2.50
3.00
0.35
V/ns
W
°C
°C
°C
°C
°C
Nm/lb.in.
g
g
g
Characteristic Values
Min. Typ. Max.
1000
V
2.5 4.5 V
±50 nA
5 μA
250 μA
6.0 7.5 Ω
GS
TO-220 (IXTP)
(TAB)
G DS
TO-252 (IXTY)
(TAB)
G
S
G = Gate
S = Source
(TAB)
D = Drain
TAB = Drain
Features
z International standard packages
z Unclamped Inductive Switching
(UIS) rated
z Low package inductance
- easy to drive and to protect
Advantages
z Easy to mount
z Space savings
z High power density
Applications:
z Switched-mode and resonant-mode
power supplies
z DC-DC Converters
z Laser Drivers
z AC and DC motor controls
z Robotics and servo controls
© 2008 IXYS CORPORATION, All rights reserved
DS99817B(04/08)

1 Page





IXTA2N100P pdf, ピン配列
Fig. 1. Output Characteristics
@ 25ºC
2.0
VGS = 10V
1.8 7V
1.6
1.4
6V
1.2
1.0
0.8
0.6
0.4 5V
0.2
0.0
0 1 2 3 4 5 6 7 8 9 10 11 12 13 14
VDS - Volts
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
7V
6V
5V
5 10 15 20 25 30
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = 1A Value
vs. Drain Current
2.6
2.4 VGS = 10V
TJ = 125ºC
2.2
2.0
1.8
1.6
1.4
1.2
TJ = 25ºC
1.0
0.8
0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5
ID - Amperes
© 2008 IXYS CORPORATION, All rights reserved
IXTA2N100P IXTP2N100P
IXTY2N100P
Fig. 2. Extended Output Characteristics
@ 25ºC
3.2
VGS = 10V
2.8 7V
2.4
2.0 6V
1.6
1.2
0.8
0.4 5V
0.0
0 2 4 6 8 10 12 14 16 18 20 22 24 26 28 30
VDS - Volts
Fig. 4. RDS(on) Normalized to ID = 1A Value
vs. Junction Temperature
3.0
2.8 VGS = 10V
2.6
2.4
2.2
2.0
1.8 I D = 2A
1.6
1.4
1.2
1.0
0.8
0.6
0.4
-50
-25
0
25 50 75
TJ - Degrees Centigrade
I D = 1A
100 125
150
2.2
2.0
1.8
1.6
1.4
1.2
1.0
0.8
0.6
0.4
0.2
0.0
-50
Fig. 6. Maximum Drain Current vs.
Case Temperature
-25 0
25 50 75 100 125
TC - Degrees Centigrade
150


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共有リンク

Link :


部品番号部品説明メーカ
IXTA2N100

High Voltage MOSFET

IXYS Corporation
IXYS Corporation
IXTA2N100P

Power MOSFET ( Transistor )

IXYS
IXYS


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