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IXFT21N50Q の電気的特性と機能

IXFT21N50QのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFT21N50Q
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFT21N50Q Datasheet, IXFT21N50Q PDF,ピン配置, 機能
HiPerFETTM
Power MOSFETs
Q-Class
IXFH 21N50Q
IXFT 21N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
VDSS
ID25
RDS(on)
= 500 V
= 21 A
= 0.25
trr 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 M
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
500 V
500 V
±30 V
±40 V
21 A
84 A
21 A
30 mJ
1.5 mJ
15 V/ns
280 W
-55 to +150
150
-55 to +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
500
2.5
VGS = ±30 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t 300 µs, duty cycle d 2 %
V
4.5 V
±100 nA
25 µA
1 mA
0.25
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l IXYS advanced low Qg process
l Low gate charge and capacitances
- easier to drive
- faster switching
l International standard packages
l Low RDS (on)
l Rated for unclamped Inductive load
switching (UIS) rated
l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount
l Space savings
l High power density
© 2004 IXYS All rights reserved
98718B(02/04)

1 Page





IXFT21N50Q pdf, ピン配列
22
20
18
16
14
12
10
8
6
4
2
0
0
Fig. 1. Output Characteristics
@ 25ºC
VGS = 10V
8V
7V
6V
5. 5V
5V
4. 5V
123456
VD S - Volts
22
20
18
16
14
12
10
8
6
4
2
0
0
Fig. 3. Output Characteristics
@ 125ºC
VGS = 10V
8V
7V
6V
5.5V
5V
4.5V
2 4 6 8 10 12 14
VD S - Volts
Fig. 5. RDS(on) Norm alized to
0.5 ID25 Value vs . ID
3. 4
3.1 VGS = 10V
2. 8
2. 5
TJ = 125ºC
2. 2
1. 9
1. 6
1.3 TJ = 25ºC
1
0. 7
0
5 10 15 20 25 30 35 40 45 50 55 60
I D - Amperes
© 2004 IXYS All rights reserved
IXFH 21N50Q
IXFT 21N50Q
Fig. 2. Extended Output Characteristics
@ 25ºC
60
55 VGS = 10V
50 8V
45 7V
40
35 6.5V
30 6V
25
20
15 5.5V
10
5 5V
0
0 3 6 9 12 15 18 21 24 27 30
VD S - Volts
Fig. 4. RDS(on) Norm alize d to 0.5 ID25
Value vs. Junction Tem perature
2. 8
2.5 VGS = 10V
2. 2
1. 9
1.6 ID = 21A
1.3 ID = 10.5A
1
0. 7
0. 4
-50
-25
0 25 50 75 100 125 150
TJ - Degrees Centigrade
Fig. 6. Drain Current vs. Case
Tem perature
24
21
18
15
12
9
6
3
0
-50 -25 0 25 50 75 100 125 150
TC - Degrees Centigrade
98718B(02/04)


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