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PDF IXFH21N50Q Data sheet ( Hoja de datos )
| Número de pieza | IXFH21N50Q | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | IXYS | |
| Logotipo |  |
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HiPerFETTM
Power MOSFETs
Q-Class
IXFH 21N50Q
IXFT 21N50Q
N-Channel Enhancement Mode
Avalanche Rated, Low Qg, High dv/dt
VDSS
ID25
RDS(on)
= 500 V
= 21 A
= 0.25 Ω
trr ≤ 250 ns
Symbol
VDSS
VDGR
VGS
VGSM
ID25
IDM
IAR
EAR
EAS
dv/dt
PD
TJ
TJM
Tstg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TJ = 25°C to 150°C
TJ = 25°C to 150°C; RGS = 1 MΩ
Continuous
Transient
TC = 25°C
TC = 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS,
TJ ≤ 150°C, RG = 2 Ω
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-268
Maximum Ratings
500 V
500 V
±30 V
±40 V
21 A
84 A
21 A
30 mJ
1.5 mJ
15 V/ns
280 W
-55 to +150
150
-55 to +150
°C
°C
°C
300 °C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ = 25°C, unless otherwise specified)
min. typ. max.
VGS = 0 V, ID = 250 µA
VDS = VGS, ID = 4 mA
500
2.5
VGS = ±30 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 ID25
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
V
4.5 V
±100 nA
25 µA
1 mA
0.25 Ω
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
G = Gate D = Drain
S = Source TAB = Drain
(TAB)
Features
l IXYS advanced low Qg process
l Low gate charge and capacitances
- easier to drive
- faster switching
l International standard packages
l Low RDS (on)
l Rated for unclamped Inductive load
switching (UIS) rated
l Molding epoxies meet UL 94 V-0
flammability classification
Advantages
l Easy to mount
l Space savings
l High power density
© 2004 IXYS All rights reserved
98718B(02/04)
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IXFH21N50Q.PDF ] | |
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