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IXFT30N60Q の電気的特性と機能

IXFT30N60QのメーカーはIXYSです、この部品の機能は「Power MOSFET ( Transistor )」です。


製品の詳細 ( Datasheet PDF )

部品番号 IXFT30N60Q
部品説明 Power MOSFET ( Transistor )
メーカ IXYS
ロゴ IXYS ロゴ 




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IXFT30N60Q Datasheet, IXFT30N60Q PDF,ピン配置, 機能
HiPerFETTM
Power MOSFETs
Q-Class
N-Channel Enhancement Mode
Avalanche Rated, High dv/dt, Low Qg
Preliminary Data Sheet
IXFH 30N60Q
IXFT 30N60Q
VDSS
ID25
RDS(on)
= 600 V
= 30 A
= 0.23
trr 250 ns
Symbol
VVDDGSRS
VVGGSSM
IIDDM25
IAR
EAR
EAS
dv/dt
PD
TJ
TTJsMtg
TL
Md
Weight
Symbol
VDSS
VGS(th)
IGSS
IDSS
RDS(on)
Test Conditions
TTJJ
= 25°C to 150°C
= 25°C to 150°C; RGS = 1 M
Continuous
Transient
TTCC
= 25°C
= 25°C, pulse width limited by TJM
TC = 25°C
TC = 25°C
TC = 25°C
IS IDM, di/dt 100 A/µs, VDD VDSS,
TJ 150°C, RG = 2
TC = 25°C
1.6 mm (0.063 in) from case for 10 s
Mounting torque
TO-247
TO-247
TO-268
Maximum Ratings
600 V
600 V
±20 V
±30 V
30 A
120 A
30 A
45 mJ
1.5 J
10 V/ns
500
-55 ... +150
150
-55 ... +150
300
W
°C
°C
°C
°C
1.13/10 Nm/lb.in.
6g
4g
Test Conditions
Characteristic Values
(TJ
=
25°C,
unless otherwise specified)
min. typ. max.
TVeGSmp=e0raVtu, rIeD
= 250µA
Coefficient
VDS = VGS, ID = 4 mA
Temperature Coefficient
VGS = ±20 VDC, VDS = 0
VDS = VDSS
VGS = 0 V
TJ = 25°C
TJ = 125°C
VGS = 10 V, ID = 0.5 • ID25
Pulse test, t 300 µs, duty cycle d 2 %
600
0.095
2.5
- 0.24
V
%/K
4.5 V
%/K
±200 nA
25 µA
1 mA
0.23
TO-247 AD (IXFH)
(TAB)
TO-268 (D3) ( IXFT)
G
S
(TAB)
G = Gate
S = Source
D = Drain
TAB = Drain
Features
z Low gate charge
z International standard packages
z Epoxy meet UL 94 V-0, flammability
classification
z Low RDS (on) HDMOSTM process
z Rugged polysilicon gate cell structure
z Avalanche energy and current rated
z Fast intrinsic Rectifier
Advantages
z Easy to mount
z Space savings
z High power density
© 2003 IXYS All rights reserved
DS99059(06/03)

1 Page





IXFT30N60Q pdf, ピン配列
27
24
21
18
15
12
9
6
3
0
0
Fig. 1. Output Characteristics
@ 25 Deg. C
VGS = 10V
9V
8V
7V
6V
5V
123 4 5 67
VDS - Volts
8
27
24
21
18
15
12
9
6
3
0
0
Fig. 3. Output Characteristics
@ 125 Deg. C
VGS = 10V
9V
8V
7V
6V
5V
2 4 6 8 10 12 14 16
VDS - Volts
Fig. 5. RDS(on) Normalized to ID25
Value vs. ID
3.1
2.8 VGS = 10V
2.5
TJ = 125ºC
2.2
1.9
1.6
1.3
1 TJ = 25ºC
0.7
0 10 20 30 40 50 60
I D - Amperes
70
© 2003 IXYS All rights reserved
IXFH 30N60Q
IXFT 30N60Q
Fig. 2. Extended Output Characteristics
@ 25 deg. C
70
VGS = 10V
60 9V
8V
50 7V
40 6V
30
20
5V
10
0
0 4 8 12 16 20 24
VDS - Volts
Fig. 4. RDS(on) Normalized to ID25 Value vs.
Junction Temperature
2.8
2.5 VGS = 10V
2.2
1.9
1.6 I D = 30 A
1.3
I D= 15A
1
0.7
0.4
-50
-25 0 25 50 75 100 125
TJ - Degrees Centigrade
150
Fig. 6. Drain Current vs. Case
T emperature
30
25
20
15
10
5
0
-50
-25 0 25 50 75 100 125
TC - Degrees Centigrade
150


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