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PDF IXBOD1 Data sheet ( Hoja de datos )
| Número de pieza | IXBOD1 | |
| Descripción | Breakover Diode Gen | |
| Fabricantes | IXYS | |
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Breakover Diode Gen1
(BOD1)
IXBOD1
VBO = 600-1000 V
IAVM =
0.9 A
VBO
[V]
600 ±50
700 ±50
800 ±50
900 ±50
1000 ±50
Standard Types
IXBOD1-06
IXBOD1-07
IXBOD1-08
IXBOD1-09
IXBOD1-10
A
Backside: isolated
K
Features / Advantages:
• Very low forward voltage drop
• Low leakage current
Applications:
• High voltage circuit protection
• Transient voltage protection
• Trigger device
• Power pulse generators
• Lightning and arcing protection
• Energy discharge circuits
• Battery overvoltage protection
• Solar array protection
Package: FP-Case
• Industry standard outline
• RoHS compliant
• Epoxy meets UL 94V-0
• Soldering pins for PCB mounting
• Base plate: Plastic overmolded tab
• Reduced weight
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
Data according ot IEC 60747 and per semiconductor unless otherwise specified
20130822a
1-5
1 page  
IXBOD1
Diode
10-1
10-2
Ep
[Ws]
10-3
10-4
10-1
10-1
10-2
Ep
[Ws]
10-3
10-4
10-1
20
10
8
6
VT 4
[V]
2
ITM = 200 A
160
120
80
60
40
20
10
5
2
1
100 101
tp [µs]
ITM = 200 A
160
120
80
60
40
20
10
5
2
1
100 101
tp [µs]
Fig. 1 Energy per pulse for trapezoidal current
waveforms (see waveform definition)
102
Fig. 2 Energy per pulse for exponentially decaying
current pulse (see waveform definition)
102
TVJ = 125°C
TVJ = 25°C
100
10
ZthJA
[K/W]
1
Va = 0 m/s
Va = 2 m/s
1
1 10
IT [A]
Fig. 3 On-state voltage
IXYS reserves the right to change limits, test conditions and dimensions.
© 2013 IXYS All rights reserved
0.1
100
0.01
0.1
1
10 100
t [s]
Fig. 4 Transient thermal resistance
Data according ot IEC 60747 and per semiconductor unless otherwise specified
1000
20130822a
5-5
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXBOD1.PDF ] | |
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