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M28C16 の電気的特性と機能

M28C16のメーカーはSTMicroelectronicsです、この部品の機能は「16K (2K x 8) PARALLEL EEPROM」です。


製品の詳細 ( Datasheet PDF )

部品番号 M28C16
部品説明 16K (2K x 8) PARALLEL EEPROM
メーカ STMicroelectronics
ロゴ STMicroelectronics ロゴ 




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M28C16 Datasheet, M28C16 PDF,ピン配置, 機能
M28C16
16K (2K x 8) PARALLEL EEPROM
with SOFTWARE DATA PROTECTION
FAST ACCESS TIME: 90ns
SINGLE 5V ± 10% SUPPLY VOLTAGE
LOW POWER CONSUMPTION
FAST WRITE CYCLE:
– 64 Bytes Page Write Operation
– Byte or Page Write Cycle: 3ms Max
ENHANCED END OF WRITE DETECTION:
– Data Polling
– Toggle Bit
PAGE LOAD TIMER STATUS BIT
HIGH RELIABILITY SINGLE POLYSILICON,
CMOS TECHNOLOGY:
– Endurance >100,000 Erase/Write Cycles
– Data Retention >40 Years
JEDEC APPROVED BYTEWIDE PIN OUT
SOFTWARE DATA PROTECTION
M28C16 is replaced by the products
described on the document M28C16A
DESCRIPTION
The M28C16 is a 2K x 8 low power Parallel
EEPROM fabricatedwith SGS-THOMSON proprie-
tary single polysilicon CMOS technology. The de-
vice offers fast access time with low power
dissipation and requires a 5V power supply. The
circuit has been designed to offer a flexible micro-
controller interface featuring both hardware and
software handshaking with Data Polling and Toggle
Bit. The M28C16 supports 64 byte page write op-
eration. A Software Data Protection (SDP) is also
possible using the standard JEDEC algorithm.
Table 1. Signal Names
A0 - A10 Address Input
DQ0 - DQ7 Data Input / Output
W Write Enable
E Chip Enable
G Output Enable
RB Ready / Busy
VCC Supply Voltage
VSS Ground
NOT FOR NEW DESIGN
24
1
PDIP24 (P)
PLCC32 (K)
24
1
SO24 (MS)
300 mils
TSOP28 (N)
8 x13.4mm
Figure 1. Logic Diagram
VCC
11
A0-A10
8
DQ0-DQ7
W M28C16
E RB *
G
VSS
AI01518B
Note: * RB function is offered only with TSOP28 package.
November 1997
This is information on a product still in production bu t not recommended for new de sign.
1/18

1 Page





M28C16 pdf, ピン配列
M28C16
Table 2. Absolute Maximum Ratings (1)
Symbol
Parameter
Value
Unit
TA Ambient Operating Temperature
– 40 to 125
°C
TSTG
Storage Temperature Range
– 65 to 150
°C
VCC Supply Voltage
– 0.3 to 6.5
V
VIO Input/Output Voltage
– 0.3 to VCC +0.6
V
VI Input Voltage
– 0.3 to 6.5
V
VESD
Electrostatic Discharge Voltage (Human Body model) (2)
4000
V
Notes: 1. Except for the rating ”Operating Temperature Range”, stresses above those listed in the Table ”Absolute Maximum Ratings” may
cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other conditions
above those indicated in the Operating sections of this specification is not implied. Exposure to Absolute Maximum Rating
conditions for extended periods may affect device reliability. Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. 100pF through 1500; MIL-STD-883C, 3015.7
Table 3. Operating Modes (1)
Standby
Mode
E GW
1 XX
DQ0 - DQ7
Hi-Z
Output Disable
Write Disable
X1X
XX1
Hi-Z
Hi-Z
Read
Write
001
010
Data Out
Data In
Chip Erase
Note: 1. 0 = VIL; 1 = VIH; X = VIL or VIH; V = 12 ± 5%.
0
PIN DESCRIPTION
Addresses (A0-A10). The address inputs select
an 8-bit memory location during a read or write
operation.
Chip Enable (E). The chip enable input must be
low to enable all read/write operations. When Chip
Enable is high, power consumption is reduced.
Output Enable (G). The Output Enable input con-
trols the data output buffers and is used to initiate
read operations.
Data In/ Out (DQ0 - DQ7). Data is written to or read
from the M28C16 through the I/O pins.
Write Enable (W). The Write Enable input controls
the writing of data to the M28C16.
Ready/Busy (RB). Ready/Busy is an open drain
output that can be used to detect the end of the
internal write cycle.
It is offered only with the TSOP28 package. The
reader should refer to the M28C17 datasheet for
more information about the Ready/Busy func-
tion.
V0
Hi-Z
OPERATION
In order to prevent data corruption and inadvertent
write operations an internal VCC comparator inhib-
its Write operation if VCC is below VWI (see Table
7). Access to the memory in write mode is allowed
after a power-up as specified in Table 7.
Read
The M28C16 is accessed like a static RAM. When
E and G are low with W high, the data addressed
is presented on the I/O pins. The I/O pins are high
impedance when either G or E is high.
Write
Write operations are initiated when both W and E
are low and G is high.The M28C16 supports both
E and W controlled write cycles. The Address is
latched by the falling edge of E or W which ever
occurs last and the Data on the rising edge of E or
W which ever occurs first. Once initiated the write
operation is internally timed until completion.
3/18


3Pages


M28C16 電子部品, 半導体
M28C16
Table 4. AC Measurement Conditions
Input Rise and Fall Times
20ns
Input Pulse Voltages
0.4V to 2.4V
Input and Output Timing Ref. Voltages 0.8V to 2.0V
Note that Output Hi-Z is defined as the point where data is no
longer driven.
Figure 7. AC Testing Input Output Waveforms
2.4V
0.4V
2.0V
0.8V
AI00826
Figure 8. AC Testing Equivalent Load Circuit
1.3V
1N914
DEVICE
UNDER
TEST
3.3k
OUT
CL = 30pF
CL includes JIG capacitance
AI01129
Table 5. Capacitance (1) (TA = 25 °C, f = 1 MHz )
Symbol
Parameter
Test Condition
CIN Input Capacitance
COUT
Output Capacitance
Note: 1. Sampled only, not 100% tested.
VIN = 0V
VOUT = 0V
Min Max Unit
6 pF
12 pF
Table 6. Read Mode DC Characteristics (TA = 0 to 70°C or –40 to 85°C; VCC = 4.5V to 5.5V)
Symbol
Parameter
Test Condition
Min Max Unit
ILI Input Leakage Current
ILO Output Leakage Current
ICC (1)
Supply Current (TTL inputs)
Supply Current (CMOS inputs)
ICC1 (1)
ICC2 (1)
Supply Current (Standby) TTL
Supply Current (Standby) CMOS
VIL Input Low Voltage
VIH Input High Voltage
VOL Output Low Voltage
VOH Output High Voltage
Note: 1. All I/O’s open circuit.
0V VIN VCC
0V VIN VCC
E = VIL, G = VIL , f = 5 MHz
E = VIL, G = VIL , f = 5 MHz
E = VIH
E > VCC –0.3V
IOL = 2.1 mA
IOH = –400 µA
– 0.3
2
2.4
10
10
30
25
1
100
0.8
VCC +0.5
0.4
µA
µA
mA
mA
mA
µA
V
V
V
V
Table 7. Power Up Timing (1) (TA = 0 to 70°C or –40 to 85°C; VCC = 4.5V to 5.5V)
Symbol
Parameter
Min
tPUR Time Delay to Read Operation
tPUW
Time Delay to Write Operation (once VCC 4.5V)
VWI Write Inhibit Threshold
Note: 1. Sampled only, not 100% tested.
1
10
3.0
Max
4.2
Unit
µs
ms
V
6/18

6 Page



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共有リンク

Link :


部品番号部品説明メーカ
M28C16

16K (2K x 8) PARALLEL EEPROM

STMicroelectronics
STMicroelectronics
M28C16A

16 Kbit (2K x 8) Parallel EEPROM

STMicroelectronics
STMicroelectronics
M28C16B

16 Kbit (2K x 8) Parallel EEPROM

STMicroelectronics
STMicroelectronics
M28C17

16 Kbit (2K x 8) Parallel EEPROM

STMicroelectronics
STMicroelectronics


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