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PDF MPS901 Data sheet ( Hoja de datos )
| Número de pieza | MPS901 | |
| Descripción | NPN Silicon High-Frequency Transistor | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de MPS901 (archivo pdf) en la parte inferior de esta página. Total 16 Páginas | ||
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MOTOROLA
SEMICONDUCTOR TECHNICAL DATA
Order this document
by MMBR901LT1/D
The RF Line
NPN Silicon
High-Frequency Transistor
Designed primarily for use in high–gain, low–noise small–signal amplifiers for
operation up to 2.5 GHz. Also usable in applications requiring fast switching
times.
• High Current–Gain — Bandwidth Product
• Low Noise Figure @ f = 1.0 GHz —
NF(matched) = 1.8 dB (Typ) (MRF9011LT1)
NF(matched) = 1.9 dB (Typ) (MMBR901LT1, T3)
• High Power Gain —
Gpe(matched) = 13.5 dB (Typ) @ f = 1.0 GHz (MRF9011LT1)
Gpe(matched) = 12.0 dB (Typ) @ f = 1.0 GHz (MMBR901LT1, T3)
• Guaranteed RF Parameters (MRF9011LT1)
• Surface Mounted SOT–23 & SOT–143 Offer Improved RF Performance
Lower Package Parasitics
High Gain
• Available in tape and reel packaging options:
T1 suffix = 3,000 units per reel
T3 suffix = 10,000 units per reel
MMBR901LT1, T3
MPS901 MRF901
MRF9011LT1
IC = 30 mA
SURFACE MOUNTED
HIGH–FREQUENCY
TRANSISTOR
NPN SILICON
CASE 318–08, STYLE 6
SOT–23
LOW PROFILE, MMBR901LT1, T3
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector–Emitter Voltage
VCEO
Collector–Base Voltage
VCBO
Emitter–Base Voltage
VEBO
Collector Current — Continuous
IC
Power Dissipation @ TC = 75°C (1)
MMBR901LT1, T3; PD(max)
MRF9011LT1
Derate above 25°C
15
25
2.0
30
0.300
4.00
Vdc
Vdc
Vdc
mAdc
Watt
mW/°C
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
MPS901
PD 300 mW
4.0 mW/°C
Total Device Dissipation @ TC = 75°C (1)
Derate above 75°C
MRF901
PD
0.375
Watt
5.0 mW/°C
Storage Temperature Range All
Maximum Junction Temperature
THERMAL CHARACTERISTICS
Characteristic
Tstg – 55 to +150
TJ(max)
150
°C
°C
Symbol
Max
Unit
Storage Temperature
Thermal Resistance, Junction to Case
MRF901
MRF9011LT1, MMBR901LT1, T3
Tstg
RθJC
150 °C
°C/W
200
250
DEVICE MARKING
MRF9011LT1 = 01
MMBR901LT1, T3 = 7A
NOTE:
1. Case temperature measured on collector lead immediately adjacent to body of package.
CASE 29–04, STYLE 2
TO–226AA (TO–92)
MPS901
CASE 317–01, STYLE 2
MRF901
CASE 318A–05, STYLE 1
SOT–143
LOW PROFILE, MRF9011LT1
REV 7
©MMOotoTrOolaR, OIncL.A19R95F DEVICE DATA
MMBR901LT1, T3 MPS901 MRF901 MRF9011LT1
1
1 page  
VCE
(Vdc)
5.0
10
IC
(mA)
5.0
10
15
20
30
5.0
10
15
20
30
f
(MHz)
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
100
200
500
1000
2000
S11
|S11|
∠φ
0.85 – 41
0.78 – 76
0.71 – 131
0.66 – 169
0.60 152
S21
|S21|
13.64
10.77
6.10
3.22
1.65
∠φ
153
134
102
77
47
S12
|S12|
0.03
0.05
0.08
0.08
0.11
∠φ
65
54
35
33
46
0.72 – 59
20.01
145
0.70
– 100
14.31
123
0.66 – 150 7.03
94
0.63 179 3.57 73
0.58 147 1.79 46
0.03
0.04
0.06
0.07
0.11
62
49
38
45
57
0.65 – 75
23.44
138
0.66
– 118
15.56
116
0.65 – 159 7.10
90
0.63 174 3.57 71
0.59 144 1.77 45
0.02
0.04
0.05
0.06
0.11
57
46
42
52
62
0.61 – 89
24.32
133
0.66 – 130 15.11
111
0.66 – 166 6.68
88
0.65 171 3.32 69
0.61 143 1.65 43
0.02
0.03
0.04
0.06
0.10
51
43
46
56
65
0.63
– 132
13.18
118
0.68 – 157 7.07
104
0.69 – 177 3.23
90
0.70 165 1.78 71
0.66 138 0.93 42
0.02
0.02
0.03
0.05
0.09
47
44
55
65
79
0.85 – 38
13.67
155
0.80 – 71
10.97
136
0.70 – 126 6.35
104
0.65 – 166 3.39
78
0.58 154 1.74 48
0.03
0.05
0.07
0.07
0.10
70
56
37
36
50
0.75 – 55
20.12
147
0.71 – 94
14.60
125
0.65 – 145 7.33
96
0.62 – 177 3.74
74
0.57 149 1.88 47
0.02
0.04
0.05
0.06
0.10
66
50
39
46
60
0.68 – 68
23.53
140
0.67
– 110
15.90
119
0.64 – 155 7.45
92
0.62 177 3.74 71
0.58 146 1.90 45
0.02
0.03
0.04
0.06
0.09
61
49
42
53
65
0.64 – 79
24.77
135
0.64
– 122
15.81
114
0.64 – 161 7.10
89
0.62 174 3.53 79
0.59 145 1.75 44
0.02
0.03
0.04
0.05
0.09
56
46
46
56
68
0.61
– 114
16.25
123
0.63 – 147 9.10
107
0.65 – 172 4.22
90
0.66 168 2.27 71
0.63 140 1.15 41
0.01
0.02
0.03
0.05
0.08
48
49
53
63
79
Table 1. MRF9011LT1 Common Emitter S–Parameters
S22
|S22|
∠φ
0.93 – 17
0.80 – 29
0.55 – 42
0.45 – 48
0.47 – 63
0.87 – 23
0.67 – 36
0.44 – 43
0.37 – 46
0.41 – 60
0.81 – 27
0.59 – 38
0.40 – 40
0.35 – 43
0.40 – 58
0.77 – 28
0.55 – 35
0.41 – 34
0.39 – 39
0.44 – 56
0.72 – 15
0.66 – 16
0.62 – 24
0.59 – 38
0.62 – 62
0.93 – 14
0.83 – 24
0.60 – 35
0.51 – 40
0.54 – 55
0.88 – 19
0.72 – 30
0.50 – 35
0.45 – 38
0.49 – 53
0.85 – 22
0.65 – 31
0.47 – 32
0.44 – 35
0.50 – 51
0.81 – 23
0.62 – 29
0.48 – 28
0.46 – 33
0.53 – 50
0.79 – 15
0.71 – 15
0.66 – 22
0.63 – 33
0.67 – 53
MOTOROLA RF DEVICE DATA
MMBR901LT1, T3 MPS901 MRF901 MRF9011LT1
5
5 Page 
MRF901
+ j50
+ j25 + j100
+ j150
2
+ j10 S11
1.5
+ j250
+ j500
1
0 10 25 50 100 150 250 500
0.5
0.4 0.3
1 0.7 0.5
1.5
0.3
f = 0.1 GHz – j500
– j10
2 0.4 0.2
– j250
f = 0.2 GHz
– j150
– j25 – j100
– j50
COORDINATES IN OHMS
Figure 23. Input and Output Reflection
Coefficients versus Frequency
(VCE = 10 V, IC = 15 mA)
+150°
180°
S21
12
+120°
S21
96
+ 90°
1.2
0.3
0.5
0.7
1
1.2
1.5
3
2
2 GHz + 60°
1.5
1
S12
0.7
0.5
0.3
0.04 0.08 0.12
+ 30°
S12
0.16 0.2
0°
–150°
– 30°
–120°
– 90°
– 60°
Figure 24. Forward/Reverse Transmission
Coefficients versus Frequency
(VCE = 10 V, IC = 15 mA)
+ j50
+ j25 + j100
+ j10
0 10
– j10
+ j150
f = 500 MHz
+ j250
+ j500
25 50 100 150 250 500
1000
1875
1500 2000
– j500
– j250
– j150
– j25
– j50
– j100
Figure 25. Source Impedance (Γms) for
Optimum Noise Figure versus Frequency
(VCE = 10 V, IC = 5.0 mA)
MOTOROLA RF DEVICE DATA
MMBR901LT1, T3 MPS901 MRF901 MRF9011LT1
11
11 Page | ||
| Páginas | Total 16 Páginas | |
| PDF Descargar | [ Datasheet MPS901.PDF ] | |
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