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PDF MCD26-12io1B Data sheet ( Hoja de datos )
| Número de pieza | MCD26-12io1B | |
| Descripción | Thyristor / Diode Module | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Thyristor \ Diode Module
Phase leg
Part number
MCD26-12io1B
3 1 5 42
MCD26-12io1B
VRRM
I TAV
VT
= 2x 1200 V
= 27 A
= 1.27 V
Backside: isolated
Features / Advantages:
● Thyristor for line frequency
● Planar passivated chip
● Long-term stability
● Direct Copper Bonded Al2O3-ceramic
Applications:
● Line rectifying 50/60 Hz
● Softstart AC motor control
● DC Motor control
● Power converter
● AC power control
● Lighting and temperature control
Package: TO-240AA
● Isolation Voltage: 3600 V~
● Industry standard outline
● RoHS compliant
● Soldering pins for PCB mounting
● Base plate: DCB ceramic
● Reduced weight
● Advanced power cycling
Terms Conditions of usage:
The data contained in this product data sheet is exclusively intended for technically trained staff. The user will have to evaluate the suitability of the product for the intended application and
the completeness of the product data with respect to his application. The specifications of our components may not be considered as an assurance of component characteristics. The
information in the valid application- and assembly notes must be considered. Should you require product information in excess of the data given in this product data sheet or which concerns
the specific application of your product, please contact your local sales office.
Due to technical requirements our product may contain dangerous substances. For information on the types in question please contact your local sales office.
Should you intend to use the product in aviation, in health or life endangering or life support applications, please notify. For any such application we urgently recommend
- to perform joint risk and quality assessments;
- the conclusion of quality agreements;
- to establish joint measures of an ongoing product survey, and that we may make delivery dependent on the realization of any such measures.
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
1 page  
MCD26-12io1B
Thyristor
800
50 HZ, 80% VRRM
600
ITSM
400
[A]
200
TVJ = 45°C
TVJ = 125°C
104
VR = 0 V
I2t
103
[A2s]
TVJ = 45°C
TVJ = 125°C
60
50
40
ITAVM
30
[A]
20
10
DC
180° sin
120°
60°
30°
0
10-3
10-2
10-1
100
t [s]
101
Fig. 1 Surge overload current
ITSM: Crest value, t: duration
102
1
23
t [ms]
6 8 10
Fig. 2 I2t versus time (1-10 ms)
0
0 50 100 150
TC [°C]
Fig. 3 Max. forward current
at case temperature
80
60
PT
40
[W]
20
DC
180° sin
120°
60°
30°
RthJA
[KW]
1.5
2
2.5
3
4
5
6
8
0
0 10 20 30 40 50 0
50 100 150
ITAVM [A]
TA [°C]
Fig. 4 Power dissipation versus onstate current & ambient temp. (per thyristor)
10
1: IGT, TVJ = 125°C
2: IGT, TVJ = 25°C
3: IGT, TVJ = -40°C
VG
1
[V]
3
2
1
4
56
IGD, TVJ = 125°C
0.1
100 101 102
4: PGAV = 0.5 W
5: PGM = 5 W
6: PGM = 10 W
103 104
IG [mA]
Fig. 5 Gate trigger charact.
400
300
Ptot
200
[W]
100
Circuit
B6
3x MCC26 or
3x MCD26
RthJA
[KW]
0.1
0.15
0.2
0.25
0.3
0.4
0.5
0.6
1000
100
tgd
[µs]
10
TVJ = 25°C
typ. Limit
0
0 20 40 60 80
IdAVM [A]
0
50 100
TA [°C]
150
1
10
100
IG [mA]
1000
Fig. 6 Three phase rectifier bridge: Power dissipation versus direct
output current and ambient temperature
Fig. 7 Gate trigger delay time
IXYS reserves the right to change limits, conditions and dimensions.
© 2016 IXYS all rights reserved
Data according to IEC 60747and per semiconductor unless otherwise specified
20161222b
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet MCD26-12io1B.PDF ] | |
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