STF6N62K3, STFI6N62K3, STI6N62K3,
STP6N62K3, STU6N62K3
N-channel 620 V, 0.95 Ω typ., 5.5 A SuperMESH3™ Power
MOSFET in TO-220FP, I²PAKFP, I²PAK, TO-220, IPAK packages
Datasheet − production data
Features
TAB
Order codes
STF6N62K3
STFI6N62K3
STI6N62K3
STP6N62K3
STU6N62K3
VDSS RDS(on) max. ID
620 V < 1.2 Ω 5.5 A
PTOT
30 W
30 W
90 W
90 W
90 W
■ 100% avalanche tested
■ Extremely high dv/dt capability
■ Gate charge minimized
■ Very low intrinsic capacitance
■ Improved diode reverse recovery
characteristics
■ Zener-protected
Applications
■ Switching applications
3
2
1
TO-220FP
TAB
3
2
1
TO-220
123
I²PAK
1
23
I²PAK FP
TAB
IPAK
3
2
1
Figure 1. Internal schematic diagram
D(2,TAB)
Description
These SuperMESH3™ Power MOSFETs are the
result of improvements applied to
STMicroelectronics’ SuperMESH™ technology,
combined with a new optimized vertical structure.
These devices boast an extremely low on-
resistance, superior dynamic performance and
high avalanche capability, rendering them suitable
for the most demanding applications.
Table 1. Device summary
Order codes
STF6N62K3
STFI6N62K3
STI6N62K3
STP6N62K3
STU6N62K3
Marking
6N62K3
G(1)
Package
TO-220FP
I²PAKFP
I²PAK
TO-220
IPAK
S(3)
AM01476v1
Packaging
Tube
August 2012
This is information on a product in full production.
Doc ID 14676 Rev 4
1/19
www.st.com
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