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PDF H1200NC25J Data sheet ( Hoja de datos )
| Número de pieza | H1200NC25J | |
| Descripción | Fast Symmetrical Gate Turn-Off Thyristor | |
| Fabricantes | IXYS | |
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WESTCODE
An IXYS Company
Date:- 5 Aug, 2004
Data Sheet Issue:- 2
Fast Symmetrical Gate Turn-Off Thyristor
Type H1200NC25#
Absolute Maximum Ratings
VDRM
VRSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage
Non-repetitive peak reverse voltage
MAXIMUM
LIMITS
2500
2600
100-2000
100-2000
UNITS
V
V
V
V
ITGQM
Ls
IT(AV)M
IT(RMS)
ITSM
ITSM2
I2t
di/dtcr
PFGM
PRGM
IFGM
VRGM
toff
ton
Tjop
Tstg
RATINGS
Maximum peak turn-off current, (note 2)
Snubber loop inductance, ITM=ITGQM, (note 2)
Mean on-state current, Tsink=55°C (note 3)
Nominal RMS on-state current, 25°C (note 3)
Peak non-repetitive surge current tp=10ms
Peak non-repetitive surge current, (Note 4)
I2t capacity for fusing tp=10ms
Critical rate of rise of on-state current, (note 5)
Peak forward gate power
Peak reverse gate power
Peak forward gate current
Peak reverse gate voltage (note 6).
Minimum permissible off-time, ITM=ITGQM, (note 2)
Minimum permissible on-time
Operating temperature range
Storage temperature range
Notes:-
1) VGK=-2Volts.
2) Tj=125°C, VD=80%VDM, VDM<VDRM, diGQ/dt=20A/µs, CS=3µF.
3) Double-side cooled, single phase; 50Hz, 180° half-sinewave.
4) Half-sinewave, tp=2ms
5) For di/dt>1000A/µs, consult factory.
6) May exceed this value during turn-off avalanche period.
MAXIMUM
LIMITS
1200
0.3
670
1340
10.5
19
550
1000
210
8
140
18
80
20
-40 to +125
-40 to +150
UNITS
A
µH
A
A
kA
kA
kA2s
A/µs
W
kW
A
V
µs
µs
°C
°C
Data Sheet. Type H1200NC25# Issue 2
Page 1 of 15
August, 2004
1 page  
WESTCODE An IXYS Company
Fast Symmetrical Gate Turn-Off Thyristor type H1200NC25#
2 Characteristics
2.1 Instantaneous on-state voltage
Measured using a 500µs square pulse, see also the curves of figure 2 for other values of ITM.
2.2 Latching and holding current
These are considered to be approximately equal and only the latching current is measured, type test only
as outlined below. The test circuit and wave diagrams are given in diagram 4. The anode current is
monitored on an oscilloscope while VD is increased, until the current is seen to flow during the un-gated
period between the end of IG and the application of reverse gate voltage. Test frequency is 100Hz with IGM
& IG as for td of characteristic data.
IG
IGM
100µs
Gate current
100µs
15V
Anode current
R1
Unlatched
unlatched condition
CT
Gate-drive
DUT
C1 Vs
Latched
Anode current
Latched condition
Diagram 4, Latching test circuit and waveforms.
2.3 Critical dv/dt
The gate conditions are the same as for 1.1, this characteristic is for off-state only and does not relate to
dv/dt at turn-off. The measurement, type test only, is conducted using the exponential ramp method as
shown in diagram 5. It should be noted that GTO thyristors have a poor static dv/dt capability if the gate is
open circuit or RGK is high impedance. Typical values: - dv/dt<30V/µs for RGK>10Ω.
Diagram 5, Definition of dV/dt.
2.4 Off-state leakage.
For IDRM & IRRM see notes 1.1 & 1.2 for gate leakage IGK, the off-state gate circuit is required to sink this
leakage and still maintain minimum of –2 Volts. See diagram 6.
Data Sheet. Type H1200NC25# Issue 2
Diagram 6.
Page 5 of 15
August, 2004
5 Page 
WESTCODE An IXYS Company
Fast Symmetrical Gate Turn-Off Thyristor type H1200NC25#
Figure 4 – Transient thermal impedance
0.1
H1200NC25#
Issue 2
Cathode
Anode
Double-Side
0.01
Figure 5 – Typical forward blocking voltage Vs.
external gate-cathode resistance
0
RGK
H1200NC25#
Issue 2
0.2
Tj=125oC
0.4
0.6
0.001
0.8
Tj=100oC
Tj=25oC
1
0.0001
0.001
0.01
0.1 1
Time, (s)
Figure 6 – Gate trigger current
10
1
10 100
H1200NC25#
Issue 2
Maximum
1.2
1
10 100 1000
External Gate-Cathode Resistance, RGK (Ω)
Figure 7 – Typical turn-on energy per pulse
(excluding snubber discharge)
0.4
0.35
0.3
H1200NC25#
Issue 2
IGM=40A, diGQ/dt=20A/ µs
VD=50%VDRM
Tj=25oC
500A/µs
0.25
0.2
400A/µs
0.15
300A/µs
0.1
Typical
0.1
0.05
200A/µs
100A/µs
0.01
-50
-25
0 25 50 75 100 125 150
Junction Temperature, Tj (°C)
0
0
500
1000
1500
2000
Turn-On Current, ITM (A)
Data Sheet. Type H1200NC25# Issue 2
Page 11 of 15
August, 2004
11 Page | ||
| Páginas | Total 15 Páginas | |
| PDF Descargar | [ Datasheet H1200NC25J.PDF ] | |
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