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K1351VF650 の電気的特性と機能

K1351VF650のメーカーはIXYSです、この部品の機能は「Medium Voltage Thyristor」です。


製品の詳細 ( Datasheet PDF )

部品番号 K1351VF650
部品説明 Medium Voltage Thyristor
メーカ IXYS
ロゴ IXYS ロゴ 




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K1351VF650 Datasheet, K1351VF650 PDF,ピン配置, 機能
WESTCODE
An IXYS Company
Date:- 26 May, 2005
Data Sheet Issue:- 1
Provisional Data
Medium Voltage Thyristor
Types K1351V#600 to K1351V#650
(Development part No.: KX120V#600-650)
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
6000-6500
6000-6500
6000-6500
6100-6600
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
continuous, 50Hz
Critical rate of rise of on-state current (Note 6)
repetitive, 50Hz, 60s
non-repetitive
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Single side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 115°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=115°C.
MAXIMUM
LIMITS
1351
859
526
2728
2419
14.3
15.8
1.02×106
1.25×106
75
150
300
5
3
40
-40 to +115
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
V
W
W
°C
°C
Provisional Data Sheet. Type K1351V#600 to K1351V#650 Issue 1
Page 1 of 11
May, 2005

1 Page





K1351VF650 pdf, ピン配列
WESTCODE An IXYS Company
Medium Voltage Thyristor Type K1351V#600-650
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
60
62
64
65
VDRM VDSM VRRM
V
6000
6200
6400
6500
VRSM
V
6100
6300
6500
6600
VD VR
DC V
3000
3100
3200
3250
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least 30V
is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
IG
tp1
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
6.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 300A/µs at any time during turn-
on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 150A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
Provisional Data Sheet. Type K1351V#600 to K1351V#650 Issue 1
Page 3 of 11
May, 2005


3Pages


K1351VF650 電子部品, 半導体
WESTCODE An IXYS Company
Curves
Figure 1 - On-state characteristics of Limit device
10000
K1351V#600-650
AD Issue 1
Tj = 25°C
Tj = 115°C
Medium Voltage Thyristor Type K1351V#600-650
Figure 2 - Transient thermal impedance
0.1
K1351V#600-650
AD Issue 1
SSC 0.026K/W
0.01 DSC 0.013K/W
1000
0.001
0.0001
0.00001
100
0
123456
Instantaneous On-state voltage - VTM (V)
7
Figure 3 - Gate characteristics - Trigger limits
6
K1351V#600-650
AD Issue 1
Tj=25°C
5
Max VG dc
4
IGT, VGT
3
2
0.000001
1E-05 0.0001 0.001
0.01 0.1
Time (s)
1
10 100
Figure 4 - Gate characteristics - Power curves
14
K1351V#600-650
AD Issue 1
Tj=25°C
12
10
Max VG dc
8
6
PG Max 40W dc
4
1
IGD, VGD
0
0
Min VG dc
0.2 0.4 0.6 0.8
Gate Current - IG (A)
1
2
PG 3W dc
Min VG dc
0
0 2 4 6 8 10
Gate Current - IG (A)
Provisional Data Sheet. Type K1351V#600 to K1351V#650 Issue 1
Page 6 of 11
May, 2005

6 Page



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部品番号部品説明メーカ
K1351VF650

Medium Voltage Thyristor

IXYS
IXYS


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