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K3207EC520 の電気的特性と機能

K3207EC520のメーカーはIXYSです、この部品の機能は「Medium Voltage Thyristor」です。


製品の詳細 ( Datasheet PDF )

部品番号 K3207EC520
部品説明 Medium Voltage Thyristor
メーカ IXYS
ロゴ IXYS ロゴ 




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K3207EC520 Datasheet, K3207EC520 PDF,ピン配置, 機能
Date:- 15 Nov, 2013
Data Sheet Issue:- 1
Medium Voltage Thyristor
Type K3207EC450 to K3207EC520
Development Type No. Kx142EC450-520
Absolute Maximum Ratings
VDRM
VDSM
VRRM
VRSM
VOLTAGE RATINGS
Repetitive peak off-state voltage, (note 1)
Non-repetitive peak off-state voltage, (note 1)
Repetitive peak reverse voltage, (note 1)
Non-repetitive peak reverse voltage, (note 1)
MAXIMUM
LIMITS
4500-5200
4500-5200
4500-5200
4600-5300
UNITS
V
V
V
V
OTHER RATINGS
IT(AV)M
IT(AV)M
IT(AV)M
IT(RMS)
IT(d.c.)
ITSM
ITSM2
I2t
I2t
(di/dt)cr
VRGM
PG(AV)
PGM
Tj op
Tstg
Maximum average on-state current, Tsink=55°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 2)
Maximum average on-state current. Tsink=85°C, (note 3)
Nominal RMS on-state current, Tsink=25°C, (note 2)
D.C. on-state current, Tsink=25°C, (note 4)
Peak non-repetitive surge tp=10ms, Vrm=60%VRRM, (note 5)
Peak non-repetitive surge tp=10ms, Vrm10V, (note 5)
I2t capacity for fusing tp=10ms, Vrm=60%VRRM, (note 5)
I2t capacity for fusing tp=10ms, Vrm10V, (note 5)
continuous, 50Hz
Critical rate of rise of on-state current, (Note 6)
repetitive, 50Hz, 60s
non-repetitive
Peak reverse gate voltage
Mean forward gate power
Peak forward gate power
Operating temperature range
Storage temperature range
Notes:-
1) De-rating factor of 0.13% per °C is applicable for Tj below 25°C.
2) Double side cooled, single phase; 50Hz, 180° half-sinewave.
3) Cathode side cooled, single phase; 50Hz, 180° half-sinewave.
4) Double side cooled.
5) Half-sinewave, 125°C Tj initial.
6) VD=67% VDRM, IFG=2A, tr0.5µs, Tcase=125°C.
MAXIMUM
LIMITS
3207
2225
1369
6292
5545
32.5
36
5.28×106
6.48×106
150
300
600
5
5
50
-40 to +125
-40 to +150
UNITS
A
A
A
A
A
kA
kA
A2s
A2s
A/µs
V
W
W
°C
°C
Data Sheet. Types K3207EC450 to K3207EC520 Issue 1
Page 1 of 11
November, 2013

1 Page





K3207EC520 pdf, ピン配列
Medium Voltage Thyristor Types K3207EC450 to K3207EC520
Notes on Ratings and Characteristics
1.0 Voltage Grade Table
Voltage Grade
45
48
52
VDRM VDSM VRRM
V
4500
4800
5200
VRSM
V
4600
4900
5300
VD VR
DC V
2100
2160
2240
2.0 Extension of Voltage Grades
This report is applicable to other voltage grades when supply has been agreed by Sales/Production.
3.0 De-rating Factor
A blocking voltage de-rating factor of 0.13%/°C is applicable to this device for Tj below 25°C.
4.0 Repetitive dv/dt
Standard dv/dt is 1000V/µs.
5.0 Gate Drive
The nominal requirement for a typical gate drive is illustrated below. An open circuit voltage of at least
30V is assumed. This gate drive must be applied when using the full di/dt capability of the device.
IGM
4A/µs
tp1
IG
The magnitude of IGM should be between five and ten times IGT, which is shown on page 2. Its duration
(tp1) should be 20µs or sufficient to allow the anode current to reach ten times IL, whichever is greater.
Otherwise, an increase in pulse current could be needed to supply the necessary charge to trigger. The
‘back-porch’ current IG should remain flowing for the same duration as the anode current and have a
magnitude in the order of 1.5 times IGT.
6.0 Frequency Ratings
The curves illustrated in figures 17 & 18 are for guidance only and are superseded by the maximum
ratings shown on page 1. For operation above line frequency, please consult the factory for assistance.
7.0 Rate of rise of on-state current
The maximum un-primed rate of rise of on-state current must not exceed 1000A/µs at any time during
turn-on on a non-repetitive basis. For repetitive performance, the on-state rate of rise of current must not
exceed 500A/µs at any time during turn-on. Note that these values of rate of rise of current apply to the
total device current including that from any local snubber network.
8.0 Square wave frequency ratings
These ratings are given for load component rate of rise of on-state current of 50A/µs.
Data Sheet. Types K3207EC450 to K3207EC520 Issue 1
Page 3 of 11
November, 2013


3Pages


K3207EC520 電子部品, 半導体
Curves
Figure 1 - On-state characteristics of Limit device
10000
K3207EC450-520
Issue 1
Tj = 125°C
1000
Medium Voltage Thyristor Types K3207EC450 to K3207EC520
Figure 2 - Transient thermal impedance
0.1
K3207EC450-520
Issue 1
SSC
0.015K/W
0.01
DSC
0.0075K/W
0.001
0.0001
0.00001
100
0
0.5 1 1.5 2 2.5
Instantaneous on-state voltage - VT(V)
3
3.5
Figure 3 - Gate characteristics - Trigger limits
6
K3207EC450-520
Issue 1
Tj=25°C
Max VG dc
4
IGT, VGT
2
IGD, VGD
0
0
0.25
Min VG dc
0.5 0.75 1 1.25
Gate trigger current - IGT (A)
1.5
0.000001
0.000001
0.0001
0.01
Time (s)
1
100
Figure 4 - Gate characteristics - Power curves
14
K3207EC450-520
Issue 1
Tj=25°C
12
10 Max VG
8
6
PG Max 60W dc
4
PG 4W dc
2
Min VG dc
0
0 5 10 15 20
Gate Trigger Current - IGT (A)
Data Sheet. Types K3207EC450 to K3207EC520 Issue 1
Page 6 of 11
November, 2013

6 Page



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部品番号部品説明メーカ
K3207EC520

Medium Voltage Thyristor

IXYS
IXYS


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