Datasheet BCW66G Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	BCW66G	SILICON NPN TRANSISTORS BCW65 SERIES BCW66 SERIES SURFACE MOUNT NPN SILICON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR BCW65 and BCW66 Series types are NPN Silicon Transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for gen	Central Semiconductor	transistor
2	BCW66G	GENERAL PURPOSE TRANSISTOR Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company SOT-23 Formed SMD Package BCW66F, BCW66G BCW66H GENERAL PURPOSE TRANSISTOR N–P–N transistor Marking BCW 66F = EF BCW 66G = EG BCW 66H = EH PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuratio	CDIL	transistor
3	BCW66G	NPN Plastic Encapsulated Transistor Elektronische Bauelemente BCW66F / BCW66G / BCW66H 0.8A , 75V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES Complementary to BCW68 MARKING Part Number BCW66F BCW66G BCW66H Marking Code EF EG EH PACKAGE INFORMATION Packag	SeCoS	transistor
4	BCW66G	NPN General Purpose Amplifier BL Galaxy Electrical NPN General Purpose Amplifier FEATURES z For general AF appilications. z High current gain. Pb Lead-free z Low collector-emitter saturation voltage. z Complementary types:BCW67,BCW68(PNP) APPLICATIONS z General purpose medium power amplifier. z Switching appilication. Pro	Galaxy Electrical	amplifier
5	BCW66G	GENERAL PURPOSE TRANSISTOR BCW66F,G MAXIMUM RATINGS CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR NPN SILICON Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous THERMAL CHARACTERISTICS Symbol vCEO vCBO v EBO c Characteristic Symbol *Tot	Motorola Semiconductors	transistor

BCW Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	BCW29	EPITAXIAL PLANAR PNP TRANSISTOR SEMICONDUCTOR TECHNICAL DATA GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES ᴌComplementary to BCW31/32 MAXIMUM RATING (Ta=25ᴱ) CHARACTERISTIC SYMBOL RATING Collector-Base Voltage VCBO -30 Collector-Emitter Voltage VCEO -20 Emitter-Base Voltage VEBO -5 Collector Current	KEC	transistor
2	BCW29	PNP General Purpose Transistors SMD Type TransistIoCrs PNP General Purpose Transistors BCW29,BCW30 Features Low current (max. 100 mA). Low voltage (max. 32 V). +0.12.4 -0.1 SOT-23 2.9+0.1 -0.1 0.4+0.1 -0.1 3 12 0.95+0.1 -0.1 1.9+0.1 -0.1 Absolute Maximum Ratings Ta = 25 Parameter Symbol Collector-base voltage VCBO Colle	Kexin	transistor
3	BCW29	Silicon Planar Epitaxial Transistor	Philips	transistor
4	BCW29	GENERAL PURPOSE TRANSISTOR BCW29,30 CASE 318-02/03, STYLE 6 SOT-23 (TO-236AA/AB) GENERAL PURPOSE TRANSISTOR PNP SILICON MAXIMUM RATINGS Rating Collector-Emitter Voltage Collector-Base Voltage Emitter-Base Voltage —Collector Current Continuous Symbol vCEO VCBO vESO ic THERMAL CHARACTERISTICS Characteristic *Total Device	Motorola Semiconductors	transistor
5	BCW29	SILICON PLANAR EPITAXIAL TRANSISTORS Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company BCW29 BCW30 SILICON PLANAR EPITAXIAL TRANSISTORS P–N–P transistors Marking BCW29 = C1 BCW30 = C2 PACKAGE OUTLINE DETAILS ALL DIMENSIONS IN mm Pin configuration 1 = BASE 2 = EMITTER 3 = COLLECTOR 3 1 2	CDIL	transistor
6	BCW29	PNP general purpose transistors DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D088 BCW29; BCW30 PNP general purpose transistors Product speciﬁcation Supersedes data of 1997 Sep 03 1999 Apr 13 Philips Semiconductors Product speciﬁcation PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low v	NXP Semiconductors	transistor
7	BCW29	Surface mount Si-Epitaxial PlanarTransistors BCW29, BCW30 BCW29, BCW30 PNP Surface Mount General Purpose Si-Epi-Planar Transistors Si-Epi-Planar Universaltransistoren für die Oberflächenmontage Version 2006-07-28 2.9 ±0.1 0.4 3 Type Code 1 2 1.1 1.9 Dimensions - Maße [mm] 1=B 2=E 3=C 2.5 max 1.3±0.1 Power dissipation – Verlus	Diotec Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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