Datasheet 2SD596 Equivalent ( PDF )

N.º	Número de pieza	Descripción	Fabricantes	Category
1	2SD596	NPN EPITAXIAL SILICON TRANSISTOR RoHS 2SD596 2SD596 TRANSISTOR (NPN) DFEATURES TPower dissipation .,LPCM: 0.2 W (Tamb=25℃) 0. 95¡ À0. 025 1. 02 0. 35 2. 92¡ À0. 05 Collector current ICM: 0.7 OCollector-base voltage A 1. 9 V(BR)CBO: 30 V COperating and storage junction temperature range TJ, Tstg: -55℃ to +150	WEJ	transistor
2	2SD596	Silicon NPN transistor 2SD596 Rev.E Mar.-2016 DATA SHEET 描述 / Descriptions SOT-23 塑封封装 NPN 半导体三极管。Silicon NPN transistor in a SOT-23 Plastic Package. 特征 / Features 高 hFE,与 2SB624 互补。 High hFE, complementary pair with 2SB624. 用途 / Applications 用于音频放大。 Audio	BLUE ROCKET ELECTRONICS	transistor
3	2SD596	NPN Plastic Encapsulated Transistor Elektronische Bauelemente 2SD596 0.7A , 30V NPN Plastic Encapsulated Transistor RoHS Compliant Product A suffix of “-C” specifies halogen & lead-free FEATURES High DC Current gain Complementary to 2SB624 MARKING DV4 PACKAGE INFORMATION Package MPQ SOT-23 3K Leader Size 7 inch SOT-23 A	SeCoS	transistor
4	2SD596	BIPOLAR TRANSISTORS RECTRON SEMICONDUCTOR TECHNICAL SPECIFICATION SOT-23 BIPOLAR TRANSISTORS TRANSISTOR(PNP) 2SD596 FEATURES * Power dissipation PCM : 0.2 W (Tamb=25OC) * Collector current ICM : 0.7 A * Collector-base voltage V(BR)CBO : 30 V * Operating and storage junction temperature range TJ,Tstg: -55OC	Rectron	transistor
5	2SD596	NPN Transistor TRANSISTOR (NPN) FEATURES z High DC Current gain. z Complimentary to 2SB624 2SD596 SOT-23 MAXIMUM RATINGS (TA=25℃ unless otherwise noted) Symbol VCBO VCEO VEBO IC PC Tj Tstg Parameter Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current -Continuous Collector	JinYu	transistor

2SD Datasheet ( Hoja de datos ) - resultados coincidentes

N.º	Número de pieza	Descripción	Fabricantes	Catagory
1	2SD0592A	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0592A (2SD592A) Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB0621A (2SB621A) ■ Features 0.7±0.2 Unit: mm 5.0±0.2 4.0±0.2 • Large collector power dissipation PC • Low collector-emitter saturation voltage V	Panasonic Semiconductor	transistor
2	2SD0601	Silicon NPN epitaxial planer type Transistor 2SD601A Silicon NPN epitaxial planer type For general amplification Complementary to 2SB709A 2.8 –0.3 +0.2 Unit: mm s Features q q q 0.65±0.15 +0.25 1.5 –0.05 0.65±0.15 High foward current transfer ratio hFE. Low collector to emitter saturation voltage VCE(sat). Mini type pac	Panasonic Semiconductor	transistor
3	2SD0601A	Silicon NPN epitaxial planer type Transistor Transistor 2SD0601A (2SD601A) Silicon NPN epitaxial planer type For general amplification Complementary to 2SB0709A (2SB709A) I Features G High foward current transfer ratio hFE. G Low collector to emitter saturation voltage VCE(sat). G Mini type package, allowing downsizing of the equipment and a	Panasonic Semiconductor	transistor
4	2SD0602	Silicon NPN epitaxial planer type Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t	Panasonic Semiconductor	transistor
5	2SD0602A	Silicon NPN epitaxial planer type Transistors 2SD0602A Silicon NPN epitaxial planer type Unit: mm For general amplification Complementary to 2SB0710A I Features • Low collector to emitter saturation voltage VCE(sat) • Mini type package, allowing downsizing of the equipment and automatic insertion through the tape packing and t	Panasonic Semiconductor	transistor
6	2SD0638	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0638 (2SD638) Silicon NPN epitaxial planar type For medium-power general amplification Complementary to 2SB0643 (2SB643) (0.4) (1.5) (1.5) Unit: mm 6.9±0.1 2.5±0.1 (1.0) 2.0±0.2 ■ Absolute Maximum Ratings Ta = 25°C Parameter Collector-base voltage (Emitt	Panasonic Semiconductor	transistor
7	2SD0662	Silicon NPN epitaxial planar type www.DataSheet4U.net Transistors 2SD0662, 2SD0662B (2SD662, 2SD662B) Silicon NPN epitaxial planar type For high breakdown voltage general amplification 6.9±0.1 2.5±0.1 (1.0) Unit: mm (0.4) (1.5) 2.0±0.2 • High collector-emitter voltage (Base open) VCEO • High transition frequency fT •	Panasonic Semiconductor	transistor

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Número de pieza	Descripción	Fabricantes	PDF
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