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Datasheet 2SA1036K Equivalent ( PDF ) |
| N.º | Número de pieza | Descripción | Fabricantes | Category |
| 1 | 2SA1036K | Silicon PNP transistor 2SA1036K
Rev.E Mar.-2016
DATA SHEET
描述 / Descriptions SOT-23 塑封封装 PNP 半导体三极管。Silicon PNP transistor in a SOT-23 Plastic Package.
特征 / Features
集电极直流电流大，饱和压降低，与 2SC2411K 互补。 Large Ic low Vce(sat),complementary pair with the 2SC2 |  BLUE ROCKET ELECTRONICS | transistor |
| 2 | 2SA1036K | SILICON PNP TRANSISTOR 2SA1036K(3CG1036K)
硅 PNP 半导体三极管/SILICON PNP TRANSISTOR
用途:用于中功率放大。
Purpose: Medium power amplifier applications.
特点:集电极直流电流大，饱和压降低，与 2SC2411K（3DG2411K）互补。
Features: .Large Ic low Vce(sat),complementary pair with the |  LZG | transistor |
| 3 | 2SA1036K | NPN Transistor 1. BASE 2. EMITTER 3. COLLECTOR
2SA1036K
SOT-23-3L Transistor(PNP) SOT-23-3L
2.92 0.35
1.17
Features
Large IC. IC= -500 mA Low VCE(sat). Ideal for low-voltage operation.
MARKING : HP, HQ, HR
2.80
1.60
0.15 1.90
MAXIMUM RATINGS (TA=25℃ unless otherwise noted)
Dimensions in inches and |  LGE | transistor |
| 4 | 2SA1036K | PNP General Purpose Transistors PNP General Purpose Transistors
P b Lead(Pb)-Free
2SA1036K
3 1
2
SOT-23
MAXIMUM RATINGS(Ta=25°C)
Rating Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous Total Device Dissipation TA=25°C Junction Temperature
Storage Temperature *PD MAX. Must not |  WEITRON | transistor |
| 5 | 2SA1036K | Medium Power Transistor SMD Type
Medium Power Transistor 2SA1036K
Transistors
Features
Large IC. ICMax. = -500mA Low VCE(sat). Ideal for low-voltage operation.
+0.12.4 -0.1
SOT-23
2.9+0.1 -0.1
0.4+0.1 -0.1
3
12 0.95+0.1
-0.1
1.9+0.1 -0.1
+0.11.3 -0.1
0.55 0.4
Unit: mm 0.1+0.05
-0.01
+0.10.97 -0.1
Absolute Maximum |  Kexin | transistor |
2SA Datasheet ( Hoja de datos ) - resultados coincidentes |
| N.º | Número de pieza | Descripción | Fabricantes | Catagory |
| 1 | 2SA0683 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating  Panasonic Semiconductor transistor | | |
| 2 | 2SA0684 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0683 (2SA683), 2SA0684 (2SA684)
Silicon PNP epitaxial planar type
Unit: mm
■ Features
• Allowing supply with the radial taping
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) 2SA0683 2SA0684 VCEO VEBO IC ICP PC Tj Tstg Symbol VCBO Rating Panasonic Semiconductor transistor | | |
| 3 | 2SA0879 | Transistor, Silicon PNP Epitaxial Type Transistors
2SA0879 (2SA879)
Silicon PNP epitaxial planar type
For general amplification Complementary to 2SC1573 ■ Features
• High collector-emitter voltage (Base open) VCEO
0.7+0.3 –0.2
0.7±0.1
Unit: mm
5.9±0.2 4.9±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base vo Panasonic Semiconductor transistor | | |
| 4 | 2SA0885 | Transistor, Silicon PNP Epitaxial Type Power Transistors
2SA0885 (2SA885)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency power amplification Complementary to 2SC1846 ■ Features
• Output of 3 W can be obtained by a complementary pair with 2SC1846 • TO-126B package which requires no insulation plate for installation t Panasonic Semiconductor transistor | | |
| 5 | 2SA0886 | Silicon PNP epitaxial planar type (For low-frequency power amplification Complementary) Power Transistors
2SA0886 (2SA886)
Silicon PNP epitaxial planar type
For low-frequency power amplification Complementary to 2SC1847
φ 3.16±0.1
3.8±0.3
Unit: mm
8.0+0.5 –0.1 3.2±0.2
■ Absolute Maximum Ratings Ta = 25°C
Parameter Collector-base voltage (Emitter open) Collector-emitter volt Panasonic Semiconductor transistor | | |
| 6 | 2SA100 | Ge PNP Drift ETC transistor | | |
| 7 | 2SA1001 | Silicon PNP Power Transistor INCHANGE Semiconductor
isc Silicon PNP Power Transistor
isc Product Specification 2SA1001
DESCRIPTION ·High Current Capability ·Collector-Emitter Breakdown Voltage-
: V(BR)CEO= -130V(Min.)
APPLICATIONS ·Designed for audio and general purpose applications.
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SY  Inchange Semiconductor transistor | |
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