|
|
BTB04のメーカーはUnisonic Technologiesです、この部品の機能は「SENSITIVE GATE TRIACS」です。 |
部品番号 | BTB04 |
| |
部品説明 | SENSITIVE GATE TRIACS | ||
メーカ | Unisonic Technologies | ||
ロゴ | |||
このページの下部にプレビューとBTB04ダウンロード(pdfファイル)リンクがあります。 Total 4 pages
UNISONIC TECHNOLOGIES CO., LTD
BTB04
Preliminary
SENSITIVE GATE TRIACS
DESCRIPTION
The UTC BTB04 is a 4A triacs, it uses UTC’s advanced
technology to provide customers with high commutation
performances and voltage insulated tab, etc.
The UTC BTB04 is suitable for inductive loads, general
purpose AC switching and an ON/OFF function in applications
such as induction motor starting circuits, for phase control
operation in light dimmers and static relays, etc.
FEATURES
* Low gate trigger current
* Low holding current
SYMBOL
MT2
TRIAC
G
MT1
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
BTB04L-x-x-TA3-T
BTB04G-x-x-TA3-T
Package
TO-220
Pin Assignment
123
MT1 MT2 G
Packing
Tube
SENSITIVITY AND TYPE
PART NUMBER
S
D
T
◎: Available
VOLTAGE
400V
◎
◎
600V
◎
◎
www.unisonic.com.tw
Copyright © 2013 Unisonic Technologies Co., Ltd
SENSITIVITY
10mA
5mA
5mA
TYPE
STANDARD
STANDARD
STANDARD
1 of 4
QW-R401-039.a
1 Page BTB04
Preliminary
TRIACS
ELECTRICAL CHARACTERISTICS
PARAMETER SYMBOL
TEST CONDITIONS
MIN
T
TYP
MAX
MIN
D
TYP
MAX
MIN
S
TYP
MAX
MIN
A
TYP
MAX
UNIT
Gate Trigger
Current
Gate Trigger
Voltage
IGT VD=12V (DC)
RL=33Ω
VGT TJ=25°C
I-II-III
IV
ALL
5 5 10 10 mA
5 10 10 25 mA
1.5 1.5 1.5 1.5 V
Gate
VD=VDRM,
Non-Trigger
VGD RL=3.3kΩ,
ALL 0.2
0.2
0.2
0.2
Voltage
TJ=110°C
V
VD=VDRM,
Time Gate
Trigger
tGT
IG=40mA,
dIG/dt=0.5A/µs,
ALL
2
2
2
2 µs
TJ=25°C
Holding
Current
(Note 1)
IH
IT=100mA, Gate Open,
TJ=25°C
15 15 25 25 mA
Latching
Current
IL
IG=1.2IGT,
TJ=25°C
I-III-IV
II
10
20
10
20
20
40
20 mA
40 mA
Peak
On-State
Voltage
(Note 1)
VTM
ITM=5.5A, tp=380μs,
TJ=25°C
1.65 1.65 1.65 1.65 V
Repetitive
Peak
IDRM VDRM Rated, TJ=25°C
0.01 0.01 0.01 0.01 mA
Off-State
Current
IRRM VRRM Rated, TJ=110°C
0.75 0.75 0.75 0.75 mA
Critical Rate
of Rise of
Linear Slope up to
Off-State
Voltage
(Note 1)
dV/dt VD=67%VDRM, Gate
Open, TJ=110°C
10
10 10
10 V/µs
Critical Rate
of Rise of
Off-State
Voltage at
(dV/dt)c
(dI/dt)c=1.8A/ms,
TJ=110°C
Commutation
1 1 5 5 V/µs
(Note 1)
Note: 1. For either polarity of electrode MT2 voltage with reference to electrode MT1.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 4
QW-R401-039.a
3Pages | |||
ページ | 合計 : 4 ページ | ||
|
PDF ダウンロード | [ BTB04 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BTB04 | Triacs | Inchange Semiconductor |
BTB04 | SENSITIVE GATE TRIACS | ST Microelectronics |
BTB04 | Triac | BLUE ROCKET ELECTRONICS |
BTB04 | Triac | CDIL |