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PDF IRLML6401 Data sheet ( Hoja de datos )
| Número de pieza | IRLML6401 | |
| Descripción | Power MOSFET ( Transistor ) | |
| Fabricantes | HOTTECH | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de IRLML6401 (archivo pdf) en la parte inferior de esta página. Total 4 Páginas | ||
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Plastic-Encapsulate Mosfets
IRLML6401
l Ultra Low On-Resistance
l P-Channel MOSFET
l SOT-23 Footprint
l Low Profile (<1.1mm)
l Available in Tape and Reel
l Fast Switching
l 1.8V Gate Rated
l Lead-Free
l Halogen-Free
l Marking: 1F
*
6
Absolute Maximum Ratings
Parameter
VDS
ID @ TA = 25°C
ID @ TA= 70°C
IDM
PD @TA = 25°C
PD @TA = 70°C
Drain- Source Voltage
Continuous Drain Current, VGS @ -4.5V
Continuous Drain Current, VGS @ -4.5V
Pulsed Drain Current
Power Dissipation
Power Dissipation
Linear Derating Factor
EAS
VGS
TJ, TSTG
Single Pulse Avalanche Energy
Gate-to-Source Voltage
Junction and Storage Temperature Range
Thermal Resistance
RθJA
Parameter
Maximum Junction-to-Ambient
Power MOSFET
VDSS = -12V
'
RDS(on) = 0.05Ω
Max.
-12
-4.3
-3.4
-34
1.3
0.8
0.01
33
± 8.0
-55 to + 150
Typ.
75
Max.
100
Units
V
A
W
W/°C
mJ
V
°C
Units
°C/W
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
Parameter
V(BR)DSS Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
RDS(on)
Static Drain-to-Source On-Resistance
VGS(th)
gfs
IDSS
IGSS
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Gate Threshold Voltage
Forward Transconductance
Drain-to-Source Leakage Current
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min. Typ. Max. Units
Conditions
-12 ––– ––– V VGS = 0V, ID = -250µA
––– -0.007 ––– V/°C Reference to 25°C, ID = -1mA
––– ––– 0.050
––– 0.085
Ω
VGS = -4.5V, ID = -4.3A
VGS = -2.5V, ID = -2.5A
––– 0.125
VGS = -1.8V, ID = -2.0A
-0.40 -0.55 -0.95 V VDS = VGS, ID = -250µA
8.6 ––– ––– S VDS = -10V, ID = -4.3A
––– ––– -1.0
––– ––– -25
µA
VDS = -12V, VGS = 0V
VDS = -9.6V, VGS = 0V, TJ = 55°C
––– ––– -100
––– ––– 100
nA
VGS = -8.0V
VGS = 8.0V
––– 10 15
––– 1.4 2.1
ID = -4.3A
nC VDS = -10V
––– 2.6 3.9
VGS = -5.0V
––– 11 –––
––– 32 –––
ns
VDD = -6.0V
ID = -1.0A
––– 250 –––
RD = 6.0Ω
––– 210 –––
RG = 89Ω
––– 830 –––
VGS = 0V
––– 180 ––– pF VDS = -10V
––– 125 –––
ƒ = 1.0MHz
GUANGDONG HOTTECH INDUSTRIAL CO., LTD.
Page:P4 -P1
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet IRLML6401.PDF ] | |
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