(PDF) IRFB830 Datasheet - MOSFET ( Transistor )

Número de pieza	IRFB830
Descripción	MOSFET ( Transistor )
Fabricantes	JCET
Logotipo
Hay una vista previa y un enlace de descarga de IRFB830 (archivo pdf) en la parte inferior de esta página. Total 2 Páginas
No Preview Available ! JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-263 Plastic-Encapsulate MOSFETS IRFB830 MOSFET( N-Channel ) FEATURES . Dynamic dv/dt Rating . Repetitive Avalanche Rated . Fast Switching . Ease of Paralleling . Simple Drive Requirement TO-263 1. G 2. D 3. S 123 MAXIMUM RATINGS (Ta=25℃ unless otherwise noted) Symbol Parameter ID @TC=25℃ ID @TC=100℃ IDM Continuous Drain Current, VGS @ 10 V Continuous Drain Current, VGS @ 10 V Pulsed Drain Current (note 1) PD Power Dissipation RθJA VGS Thermal Resistance from Junction to Ambient Gate-Souse Voltage EAS Single Pulse Avalanche Energy (note2) IAR Avalanche Current (note 1) EAR Repetitive Avalanche Energy (note 1) dv/dt Peak Diode Recovery dv/dt (note 3) TJ Junction Temperature Tstg Storage Temperature Value 4.5 2.9 18 2 62.5 ±20 280 4.5 7.4 3.5 150 -55~+150 Units A A A W ℃/W V mJ A mJ V/ns ℃ ℃ A,Dec,2010 1 page

Páginas	Total 2 Páginas
PDF Descargar	[ Datasheet IRFB830.PDF ]

Número de pieza	Descripción	Fabricantes
SLA6805M	High Voltage 3 phase Motor Driver IC.	Sanken
SDC1742	12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters.	Analog Devices

PDF IRFB830 Data sheet ( Hoja de datos )