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IRF3205 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IRF3205
部品説明 N-Channel Power MOSFET
メーカ First Silicon
ロゴ First Silicon ロゴ 



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IRF3205 Datasheet, IRF3205 PDF,ピン配置, 機能
SEMICONDUCTOR
TECHNICAL DATA
N-Channel Power MOSFET (55V/120A)
Purpose
Suited for low voltage applications such as automotive,
DC/DC Converters, and high efficiency switching
for power management in portable and battery operated products
Feature
Low RDS(on),low gate charge,low Crss,fast switching.
IRF3205
Absolute maximum ratings(Ta=25℃)
Parameter
Drain-Source Voltage
Drain Current
Drain Current
Pulsed Drain Current
Gate-Source Voltage
Avalanche Current
Single Pulsed Avalanche Energy
Repetitive Avalanche Energy
Total Power Dissipation
Junction and Storage Temperature Range
Symbol
VDSS
ID(Tc=25)
ID(Tc=100)
IDM
VGSS
IAR
EAS
EAR
PD(Tc=25)
TJ,TSTG
Rating
55
110
80
390
±20
62
1050
20
200
-55 to 150
Unit
V
A
A
A
V
A
mJ
mJ
W
1.Gate 2.Drain 3.Source
Electrical Characteristics(Ta=25℃)
Parameter
Symbol
Test Conditions
Min Typ Max Unit
Zero Gate Voltage Drain Current BVDSS VGS=0V
ID=250μA 55
V
Zero Gate Voltage Drain Current
Gate-Body Leakage Current
Forward
VDS=55V VGS=0V
IDSS VDS=44V
VGS=0V
TC=150
IGSS VGS=±20V VDS=0V
25 μA
250 μA
±0.1 μA
Gate Threshold Voltage
Static Drain-Source
On-Resistance
VGS(th) VDS=VGS
RDS(on) VGS=10V
ID=250μA
ID=62A
2
4V
8 m
Forward Transconductance
gFS VDS=25V ID=62A
44
S
Forward On Voltage
VSD VGS=0V
IS=62A
1.3 V
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Ciss
Coss
Crss
VDS=25V
f=1MHz
VGS=0V
3247
781
211
pF
Turn-On Delay Time
td(on)
14
Turn-On Rise Time
Turn-Off Delay Time
tr
td(off)
VDD=28V
RG=4.5
ID=62A
101
ns
50
Turn-Off Fall Time
tf
65
2015. 01. 10
Revision No : 0
1/2

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