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IRF830A の電気的特性と機能

IRF830AのメーカーはnELLです、この部品の機能は「N-Channel Power MOSFET / Transistor」です。


製品の詳細 ( Datasheet PDF )

部品番号 IRF830A
部品説明 N-Channel Power MOSFET / Transistor
メーカ nELL
ロゴ nELL ロゴ 




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IRF830A Datasheet, IRF830A PDF,ピン配置, 機能
SEMICONDUCTOR
IRF830 Series RRooHHSS
Nell High Power Products
N-Channel Power MOSFET
(4.5A, 500Volts)
DESCRIPTION
The Nell IRF830 are N-Channel enhancement mode silicon
gate power field effect transistors. They are designed, tested
and guaranteed to withstand a specified level of energy in the
breakdown avalanche mode of operation.
They are designed as an extremely efficient and reliable
device for use in a wide variety of applications such as
switching regulators. convertors, UPS, switching mode power
supplies and drivers for high power bipolar switching
transistors requiring high speed and low gate drive power.
These transistors can be operated directly from integrated
circuits.
FEATURES
RDS(ON) = 1.5Ω @ VGS = 10V
Ultra low gate charge(38nC Max.)
Low reverse transfer capacitance
(CRSS = 68pF typical)
Fast switching capability
100% avalanche energy specified
Improved dv/dt capability
150°C operation temperature
D
GDS
TO-220AB
(IRF830A)
D (Drain)
G
(Gate)
S (Source)
PRODUCT SUMMARY
ID (A)
VDSS (V)
RDS(ON) (Ω)
QG(nC) max.
4.5
500
1.5 @ VGS = 10V
38
ABSOLUTE MAXIMUM RATINGS (TC = 25°C unless otherwise specified)
SYMBOL
PARAMETER
TEST CONDITIONS
VDSS
VDGR
Drain to Source voltage(Note 1)
Drain to Gate voltage
TJ=25°C to 150°C
RGS=20KΩ
VGS Gate to Source voltage
ID Continuous Drain Current
VGS=10V, TC=25°C
VGS=10V, TC=100°C
IDM Pulsed Drain current(Note 1)
IAR Repetitive avalanche current(Note 1)
EAR Repetitive avalanche energy(Note 1)
EAS Single pulse avalanche energy(Note 2)
lAR=4.5A, RGS=50Ω, VGS=10V
lAS=4.5A, L=24mH
dv/dt
Peak diode recovery dv/dt(Note 3)
Total power dissipation
PD
Derating factor above 25°C
TC=25°C
TJ Operation junction temperature
TSTG
Storage temperature
TL Maximum soldering temperature, for 10 seconds 1.6mm from case
Mounting torque, #6-32 or M3 screw
Note: 1.Repetitive rating: pulse width limited by junction temperature.
2.VDD = 50V, L=24mH, lAS=4.5A, RG =25Ω, starting TJ =25°C
3.ISD ≤ 4.5A, di/dt ≤ 75A/µs, VDD V(BR)DSS, starting TJ ≤ 150°C.
VALUE
500
500
±20
4.5
2.9
18
4.5
7.4
280
3.5
74
0.59
-55 to 150
-55 to 150
300
10 (1.1)
UNIT
V
A
mJ
mJ
V /ns
W
W /°C
ºC
lbf.in (N.m)
www.nellsemi.com
Page 1 of 7

1 Page





IRF830A pdf, ピン配列
SEMICONDUCTOR
ORDERING INFORMATION SCHEME
IRF830 Series RRooHHSS
Nell High Power Products
IRF 830 A
MOSFET series
N-Channel, IRF series
Current & Voltage rating, lD & VDS
4.5A / 500V
Package type
A = TO-220AB
Fig.1 Typical output characteristics,
TC=25°C
101
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
100
4.5V
10-1
20µs pulse width
TC=25°C
100 101
Drain-to-Source voltage , VDS (V)
Fig.2 Typical transfer characteristics
101
150°C
25°C
100
10-1
VDS=50V
20µs pulse width
4 5 6 7 8 9 10
Gate-to-Source voltage , VGS (volts)
Fig.3 Typical output characteristics,
TC=150°C
101
VGS
Top: 15V
10V
8V
7V
6V
5.5V
5V
Bottorm: 4.5V
100
4.5V
10-1
100
20µs pulse width
TC=150°C
101
Drain-to-Source voltage , VDS (volts)
Fig.4 Normalized On-Resistance vs. Temperature
3
lD =3.1A
2.5 VGS =10V
2
1.5
1
0.5
0
-60 -40 -20 0 20 40 60 80 100 120 140 160
Junction Temperature,TJ (°C)
www.nellsemi.com
Page 3 of 7


3Pages


IRF830A 電子部品, 半導体
SEMICONDUCTOR
IRF830 Series RRooHHSS
Nell High Power Products
Fig.12c. Maximum avalanche energy vs.
Drain current
600
lD
500
TOP
2.0A
2.8A
BOTTOM 4.5A
400
300
200
100
0 VDD = 50 V
25 50
75 100 125 150
Starting Junction temperature, TJ (°C)
Fig.13a. Basic gate charge waveform
VGS
10V
QGS
QG
QGD
Charge
Fig.13b. Gate charge test circuit
Current Regulator
Same Type as D.U.T.
50KΩ
12V 0.2µF
0.3µF
VGS
3mA
D.U.T.
+
- VDS
RG RD
Current Sampling Resistors
Fig.14 Peak diode recovery dv/dt test circuit for N-Channel MOSFET
D.U.T.
+ Circuit Layout Considerations
• Low Stray lnductance
• Ground Plane
• Low Leakage lnductance
Current Transformer
-
+
- -+
RG
dv/dt controlled by RG
Driver same type as D.U.T.
+
lSD controlled by Duty Factor "D" - VDD
D.U.T. -Device Under Test
Driver Gate Drive
P.W.
Period
D=
P.W.
Period
*VGS=10V
D.U.T. I SD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
Inductor Curent
Forward Drop
Ripple 5%
VDD
ISD
*VGS = 5V for Logic Level Devices and 3V for drive devices
www.nellsemi.com
Page 6 of 7

6 Page



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