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PDF 1N4148W Data sheet ( Hoja de datos )
| Número de pieza | 1N4148W | |
| Descripción | SILICON EPITAXIAL SWITCHING DIODE | |
| Fabricantes | CDIL | |
| Logotipo |  |
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Continental Device India Limited
An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company
SILICON EPITAXIAL SWITCHING DIODE
1N4148W
SOD-123
PLASTIC PCAKAGE
1N4148W= A2 with cathode band
Fast Switching Diode
ABSOLUTE MAXIMUM RATINGS (Ta=25ºC)
DESCRIPTION
Continuous Reverse Voltage
Repetitive Peak Reverse Voltage
Average recified Current half wave rectification
with resistive load f >50 Hz
Surge Forward Current t < 1s and Tj=25ºC
Power Dissipation
Junction Temperature
Storage Temperature Range
SYMBOL
VR
VRRM
*IF (AV)
IFSM
*Ptot
Tj
Tstg
VALUE
75
100
150
500
400
150
- 65 to +150
THERMAL RESISTANCE
Junction to Ambient in free air
*Rth (j-a)
450
*Valid provided that electrodes are kept at ambient Temperature
ELECTRICAL CHARACTERISTICS (Tamb=25ºC unless specified otherwise)
DESCRIPTION
SYMBOL
TEST CONDITION
Forward Voltage
VF IF=10mA
Reverse Current
IR VR=20V
VR=20V, Tj=150ºC
VR=75V
MIN MAX
1.0
25
50
5.0
DYNAMIC CHARACTERISTICS
Diode Capacitance
Voltage Rise When Switching On
(tested with 50ms pulses)
Reverse Recovery Time
Rectification Efficiency
Cd VR=0V, f=1MHz
tested with=50mA pulses,
Vfr tp=0.1µs, rise time=<30 ns, tp= (5
to 100) KHz
trr
IF=10mA, to IR=1mA,
RL=100 Ω, at VR=6V
ηv
f=100MHz, VRF=2V
0.45
4.0
2.5
4.0
1N4148W Rev020905E
UNIT
V
V
mA
mA
mW
ºC
ºC
ºC/W
UNIT
V
nA
µA
µA
pF
ns
ns
Continental Device India Limited
Data Sheet
Page 1 of 4
1 page | ||
| Páginas | Total 4 Páginas | |
| PDF Descargar | [ Datasheet 1N4148W.PDF ] | |
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