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PDF SSF7504A7 Data sheet ( Hoja de datos )
| Número de pieza | SSF7504A7 | |
| Descripción | MOSFET ( Transistor ) | |
| Fabricantes | Silikron | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de SSF7504A7 (archivo pdf) en la parte inferior de esta página. Total 8 Páginas | ||
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Main Product Characteristics:
VDSS
RDS(on)
75V
2.5mΩ(typ.)
ID 220A ①
Features and Benefits:
TO-263-7L
Advanced MOSFET process technology
Special designed for PWM, load switching and
general purpose applications
Ultra low on-resistance with low gate charge
Fast switching and reverse body recovery
175℃ operating temperature
SSF7504A7
1, Gate
2~3,5~7 Source
4,8 Drain
PinAssignment Schematic Diagram
Description:
It utilizes the latest processing techniques to achieve the high cell density and reduces the on-resistance with
high repetitive avalanche rating. These features combine to make this design an extremely efficient and reliable
device for use in power switching application and a wide variety of other applications.
Absolute max Rating:
Symbol
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VDS
VGS
EAS
IAS
TJ TSTG
Parameter
Continuous Drain Current, VGS @ 10V ①
Continuous Drain Current, VGS @ 10V ①
Pulsed Drain Current ②
Power Dissipation ③
Linear Derating Factor
Drain-Source Voltage
Gate-to-Source Voltage
Single Pulse Avalanche Energy @ L=2mH
Avalanche Current @ L=2mH
Operating Junction and Storage Temperature Range
Max.
220
170
880
333
2.2
75
± 20
1936
44
-55 to +175
Units
A
W
W/°C
V
V
mJ
A
°C
©Silikron Semiconductor CO.,LTD.
2013.07.25
www.silikron.com
Version : 1.0
page 1 of 8
1 page  
Typical electrical and thermal characteristics
SSF7504A7
Figure 5. Maximum Drain Current Vs. Case
Temperature
Figure 6.Typical Capacitance Vs. Drain-to-Source
Voltage
Figure8. Maximum Effective Transient Thermal Impedance, Junction-to-Case
©Silikron Semiconductor CO.,LTD.
2013.07.25
www.silikron.com
Version : 1.0
page 5 of 8
5 Page | ||
| Páginas | Total 8 Páginas | |
| PDF Descargar | [ Datasheet SSF7504A7.PDF ] | |
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