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IXBN42N170A PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBN42N170A
部品説明 Monolithic Bipolar MOS Transistor
メーカ IXYS
ロゴ IXYS ロゴ 



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IXBN42N170A Datasheet, IXBN42N170A PDF,ピン配置, 機能
Preliminary Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBN42N170A
VCES =
IC90 =
VCE(sat)
tfi
=
1700V
21A
6.0V
20ns
E
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM90
SSOA
(RBSOA)
T(SSCC SOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
90°C
25°C,
1ms
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
VRGGE==1105ΩV, ,nVonCErSe=pe1t2it0iv0eV, TJ = 125°C
TC = 25°C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1700
1700
V
V
± 20 V
± 30 V
38 A
21 A
265 A
ICM = 84
1360
A
V
10
313
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
μs
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 750μA, VCE = VGE
ICES VCE = 0.8 • VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = IC90, VGE = 15V, Note 1
Characteristic Values
Min.
Typ.
Max.
1700
2.5 5.5
V
V
TJ = 125°C
50 μA
1.5 mA
±100 nA
5.2 6.0 V
TJ = 125°C
5.3
V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z Square RBSOA
z 2500V~ Isolation Voltage
z High Blocking Voltage
z International Standard Package
z Anti-Parallel Diode
z Low Conduction Losses
Advantages
z Low Gate Drive Requirement
z High Power Density
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterruptible Power Supplies (UPS)
z AC Motor Drives
z Capacitor Discharge Circuits
z AC Switches
© 2012 IXYS CORPORATION, All Rights Reserved
DS98933A(11/12)

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Monolithic Bipolar MOS Transistor

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