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PDF IXBN42N170A Data sheet ( Hoja de datos )
| Número de pieza | IXBN42N170A | |
| Descripción | Monolithic Bipolar MOS Transistor | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Preliminary Technical Information
High Voltage, High Gain
BIMOSFETTM Monolithic
Bipolar MOS Transistor
IXBN42N170A
VCES =
IC90 =
VCE(sat)
tfi
≤
=
1700V
21A
6.0V
20ns
E
Symbol
VCES
VCGR
VGES
VGEM
IC25
IICCM90
SSOA
(RBSOA)
T(SSCC SOA)
PC
TJ
TJM
Tstg
VISOL
Md
Weight
Test Conditions
TC = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
Transient
TC = 25°C
TTCC
=
=
90°C
25°C,
1ms
VGE = 15V, TVJ = 125°C, RG = 10Ω
Clamped Inductive Load
VRGGE==1105ΩV, ,nVonCErSe=pe1t2it0iv0eV, TJ = 125°C
TC = 25°C
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque
Maximum Ratings
1700
1700
V
V
± 20 V
± 30 V
38 A
21 A
265 A
ICM = 84
1360
A
V
10
313
-55 ... +150
150
-55 ... +150
2500
3000
1.5/13
1.3/11.5
30
μs
W
°C
°C
°C
V~
V~
Nm/lb.in.
Nm/lb.in.
g
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 750μA, VCE = VGE
ICES VCE = 0.8 • VCES, VGE = 0V
IGES
VCE(sat)
VCE = 0V, VGE = ± 20V
IC = IC90, VGE = 15V, Note 1
Characteristic Values
Min.
Typ.
Max.
1700
2.5 5.5
V
V
TJ = 125°C
50 μA
1.5 mA
±100 nA
5.2 6.0 V
TJ = 125°C
5.3
V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z International Standard Package
z miniBLOC, with Aluminium Nitride
Isolation
z Square RBSOA
z 2500V~ Isolation Voltage
z High Blocking Voltage
z International Standard Package
z Anti-Parallel Diode
z Low Conduction Losses
Advantages
z Low Gate Drive Requirement
z High Power Density
Applications
z Switch-Mode and Resonant-Mode
Power Supplies
z Uninterruptible Power Supplies (UPS)
z AC Motor Drives
z Capacitor Discharge Circuits
z AC Switches
© 2012 IXYS CORPORATION, All Rights Reserved
DS98933A(11/12)
1 page  
IXBN42N170A
Fig. 13. Forward-Bias Safe Operating Area @ TC = 25ºC
1000
VCE(sat) Limit
100
25µs
100µs
10
1ms
1
0.1
0.01
1
TJ = 150ºC
TC = 25ºC
Single Pulse
10
100
VCE - Volts
10ms
DC
1,000
10,000
Fig. 15. Inductive Switching Energy Loss vs.
Gate Resistance
7
6 Eoff
Eon - - - -
TJ = 125ºC , VGE = 15V
5 VCE = 850V
4
I C = 84A
32
28
24
20
3 16
2
I C = 42A
12
18
04
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Inductive Switching Energy Loss vs.
Junction Temperature
6
Eoff Eon - - - -
5 RG = 1Ω , VGE = 15V
VCE = 850V
4
I C = 84A
3
28
24
20
16
2 12
I C = 42A
18
04
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 14. Forward-Bias Safe Operating Area @ TC = 75ºC
1000
VCE(sat) Limit
100
25µs
10 100µs
1 1ms
0.1
0.01
1
TJ = 150ºC
TC = 75ºC
Single Pulse
10
100
VCE - Volts
10ms
DC
1,000
10,000
Fig. 16. Inductive Switching Energy Loss vs.
Collector Current
5 25
Eoff Eon - - - -
4 TJ = 125ºC , VGE = 15V
VCE = 850V
TJ = 125ºC
20
3 15
TJ = 25ºC
2 10
15
00
20 30 40 50 60 70 80
IC - Amperes
Fig. 18. Inductive Turn-off
Switching Times vs. Gate Resistance
140
t f i t d(off) - - - -
120 TJ = 125ºC, VGE = 15V
VCE = 850V
100
450
400
350
80
I C = 84A
60
40
I C = 42A
300
250
200
20 150
0 100
1 2 3 4 5 6 7 8 9 10
RG - Ohms
© 2012 IXYS CORPORATION, All Rights Reserved
5 Page | ||
| Páginas | Total 6 Páginas | |
| PDF Descargar | [ Datasheet IXBN42N170A.PDF ] | |
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