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IXBN75N170 PDF Datasheet ( 特性, スペック, ピン接続図 )

部品番号 IXBN75N170
部品説明 Monolithic Bipolar MOS Transistor
メーカ IXYS
ロゴ IXYS ロゴ 

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IXBN75N170 Datasheet, IXBN75N170 PDF,ピン配置, 機能
Preliminary Technical Information
BiMOSFETTM Monolithic
Bipolar MOS Transistor
IXBN75N170
VCES
IC90
VCE(sat)
=
=
1700V
75A
3.1V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
1700
1700
±20
V
V
V
Transient
±30 V
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
145
75
680
ICM = 150
VCE < 0.8 VCES
625
-55 ... +150
A
A
A
A
W
°C
150 °C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300 °C
260 °C
50/60Hz
IISOL 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque (M4)
2500
3000
1.5/13
1.3/11.5
V~
V~
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 1.5mA, VCE = VGE
ICES VCE = 0.8 VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = IC90, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1700
V
2.5 5.5 V
25 μA
2 mA
±100 nA
2.6 3.1 V
3.1 V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z International Standard Package
z High Blocking Voltage
z Isolation Voltage 3000 V~
z High Current Handling Capability
z Anti-Parallel Diode
Advantages
z High Power Density
z Low Gate Drive Requirement
z Easy to Mount with 2 Screws
z Intergrated Diode Can Be Used for
Protection
Applications
z Capacitor Discharge
z AC Switches
z Switch-Mode and Resonant-Mode
Power Supplies
z UPS
z AC Motor Drives
© 2009 IXYS CORPORATION, All Rights Reserved
DS100168A(10/09)

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Monolithic Bipolar MOS Transistor

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