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PDF IXBN75N170 Data sheet ( Hoja de datos )
| Número de pieza | IXBN75N170 | |
| Descripción | Monolithic Bipolar MOS Transistor | |
| Fabricantes | IXYS | |
| Logotipo |  |
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Preliminary Technical Information
BiMOSFETTM Monolithic
Bipolar MOS Transistor
IXBN75N170
VCES
IC90
VCE(sat)
=
=
≤
1700V
75A
3.1V
Symbol
VCES
VCGR
VGES
VGEM
IC25
IC90
ICM
SSOA
(RBSOA)
PC
TJ
TJM
Tstg
TL
TSOLD
VISOL
Md
Weight
Test Conditions
Maximum Ratings
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
Continuous
1700
1700
±20
V
V
V
Transient
±30 V
TC = 25°C
TC = 90°C
TC = 25°C, 1ms
VGE= 15V, TVJ = 125°C, RG = 1Ω
Clamped Inductive Load
TC = 25°C
145
75
680
ICM = 150
VCE < 0.8 • VCES
625
-55 ... +150
A
A
A
A
W
°C
150 °C
-55 ... +150
°C
Maximum Lead Temperature for Soldering
1.6 mm (0.062 in.) from Case for 10
300 °C
260 °C
50/60Hz
IISOL ≤ 1mA
t = 1min
t = 1s
Mounting Torque
Terminal Connection Torque (M4)
2500
3000
1.5/13
1.3/11.5
V~
V~
Nm/lb.in.
Nm/lb.in.
30 g
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
BVCES
IC = 250μA, VGE = 0V
VGE(th)
IC = 1.5mA, VCE = VGE
ICES VCE = 0.8 • VCES, VGE = 0V
TJ = 125°C
IGES VCE = 0V, VGE = ± 20V
VCE(sat)
IC = IC90, VGE = 15V, Note 1
TJ = 125°C
Characteristic Values
Min. Typ. Max.
1700
V
2.5 5.5 V
25 μA
2 mA
±100 nA
2.6 3.1 V
3.1 V
SOT-227B, miniBLOC
E153432
Ec
G
Ec
C
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z International Standard Package
z High Blocking Voltage
z Isolation Voltage 3000 V~
z High Current Handling Capability
z Anti-Parallel Diode
Advantages
z High Power Density
z Low Gate Drive Requirement
z Easy to Mount with 2 Screws
z Intergrated Diode Can Be Used for
Protection
Applications
z Capacitor Discharge
z AC Switches
z Switch-Mode and Resonant-Mode
Power Supplies
z UPS
z AC Motor Drives
© 2009 IXYS CORPORATION, All Rights Reserved
DS100168A(10/09)
1 page  
Fig. 13. Resistive Turn-on
Rise Time vs. Junction Temperature
400
RG = 1Ω , VGE = 15V
360 VCE = 850V
320 I C = 150A
280
240
200
I C = 75A
160
120
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on
Switching Times vs. Gate Resistance
800
700 t r
t d(on) - - - -
TJ = 125ºC, VGE = 15V
600 VCE = 850V
500 I C = 150A
80
75
70
65
400 60
I C = 75A
300 55
200 50
100 45
1 2 3 4 5 6 7 8 9 10
RG - Ohms
Fig. 17. Resistive Turn-off
Switching Times vs. Collector Current
1000
340
900
tf
t d(off) - - - -
320
RG = 1Ω, VGE = 15V
800
VCE = 850V
300
700 280
600 260
500 240
400 220
300 200
200
TJ = 125ºC, 25ºC
180
100 160
30 40 50 60 70 80 90 100 110 120 130 140 150
IC - Amperes
IXBN75N170
Fig. 14. Resistive Turn-on
Rise Time vs. Collector Current
450
400 RG = 1Ω , VGE = 15V
VCE = 850V
350
300
TJ = 125ºC
250
200
TJ = 25ºC
150
100
50
0
30 40 50 60 70 80 90 100 110 120 130 140 150
IC - Amperes
Fig. 16. Resistive Turn-off
Switching Times vs. Junction Temperature
800
t f t d(off) - - - -
700 RG = 1Ω, VGE = 15V
VCE = 850V
600
I C = 75A
500
320
300
280
260
400 240
300 220
I C = 150A
200 200
100 180
25 35 45 55 65 75 85 95 105 115 125
TJ - Degrees Centigrade
Fig. 18. Resistive Turn-off
Switching Times vs. Gate Resistance
900
800 t f
t d(off) - - - -
TJ = 125ºC, VGE = 15V
700 VCE = 850V
600
I C = 75A
500
400
300 I C = 150A
200
100
0
123456789
RG - Ohms
520
480
440
400
360
320
280
240
200
160
10
© 2009 IXYS CORPORATION, All Rights Reserved
IXYS REF: B_75N170(8T)7-01-09
5 Page | ||
| Páginas | Total 5 Páginas | |
| PDF Descargar | [ Datasheet IXBN75N170.PDF ] | |
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