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1N4005S の電気的特性と機能

1N4005SのメーカーはMDDです、この部品の機能は「GENERAL PURPOSE SILICON RECTIFIER」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N4005S
部品説明 GENERAL PURPOSE SILICON RECTIFIER
メーカ MDD
ロゴ MDD ロゴ 




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1N4005S Datasheet, 1N4005S PDF,ピン配置, 機能
1N4001S THRU 1N4007S
GENERAL PURPOSE SILICON RECTIFIER
Reverse Voltage - 50 to 1000 Volts Forward Current - 1.0 Ampere
A-405
0.107 (2.7)
0.080 (2.3)
DIA.
1.0 (25.4)
MIN.
0.205(5.2)
0.166(4.2)
1.0 (25.4)
MIN.
0.025 (0.65)
0.021 (0.55)
DIA.
Dimensions in inches and (millimeters)
FEATURES
The plastic package carries Underwriters Laboratory
Flammability Classification 94V-0
Construction utilizes void-free
molded plastic technique
Low reverse leakage
High forward surge current capability
High temperature soldering guaranteed:
250 C/10 seconds,0.375(9.5mm) lead length,
5 lbs. (2.3kg) tension
MECHANICAL DATA
Case: A-405 molded plastic body
Terminals: Plated axial leads, solderable per MIL-STD-750,
Method 2026
Polarity: Color band denotes cathode end
Mounting Position: Any
Weight:0.008 ounce, 0.23 grams
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Ratings at 25 C ambient temperature unless otherwise specified.
Single phase half-wave 60Hz,resistive or inductive load,for capacitive load current derate by 20%.
MDD Catalog Number
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
0.375(9.5mm) lead length at TA=75 C
Peak forward surge current
8.3ms single half sine-wave superimposed on
rated load (JEDEC Method)
Maximum instantaneous forward voltage at 1.0A
Maximum DC reverse current TA=25 C
at rated DC blocking voltage TA=100 C
Typical junction capacitance (NOTE 1)
Typical thermal resistance (NOTE 2)
Operating junction and storage temperature range
SYMBOLS
VRRM
VRMS
VDC
1N 1N 1N 1N 1N
4001S 4002S 4003S 4004S 4005S
50 100 200 400 600
35 70 140 280 420
50 100 200 400 600
1N
4006S
800
560
800
1N
4007S
1000
700
1000
I(AV) 1.0
IFSM
VF
IR
CJ
RθJA
TJ,TSTG
30.0
1.1
5.0
50.0
15.0
50.0
-50 to+ 150
UNITS
VOLTS
VOLTS
VOLTS
Amp
Amps
Volts
µA
pF
C/W
C
Note: 1.Measured at 1MHz and applied reverse voltage of 4.0V D.C.
2.Thermal resistance from junction to ambient at 0.375(9.5mm)lead length,P.C.B. mounted

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共有リンク

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