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BRY55-100のメーカーはDigitron Semiconductorsです、この部品の機能は「SILICON CONTROLLED RECTIFIER」です。 |
部品番号 | BRY55-100 |
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部品説明 | SILICON CONTROLLED RECTIFIER | ||
メーカ | Digitron Semiconductors | ||
ロゴ | |||
このページの下部にプレビューとBRY55-100ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
BRY55 SERIES
High-reliability discrete products
and engineering services since 1977
SILICON CONTROLLED RECTIFIER
FEATURES
Available as “HR” (high reliability) screened per MIL-PRF-19500, JANTX level. Add “HR” suffix to base part number.
Available as non-RoHS (Sn/Pb plating), standard, and as RoHS by adding “-PBF” suffix.
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Peak repetitive forward and reverse blocking voltage(1)
(RGK = 1000Ω, TJ = 25-125°C)
BRY55-30
BRY55-60
BRY55-100
BRY55-200
BRY55-400
BRY55-500
BRY55-600
VRRM, VDRM
30
60
100 Volts
200
400
500
600
Forward current RMS (all conduction angles)
IT(RMS)
0.8 Amps
Peak forward surge current, TA = 25°C
(1/2 cycle, sine wave, 60Hz)
ITSM 8 Amps
Circuit fusing considerations, TA = 25°C
(t = 8.3ms)
I2t 0.15 A2s
Forward peak gate power, TA = 25°C
PGM 0.1 Watts
Forward peak gate current , TA = 25°C (300µs, 120 PPS)
IGFM 1 Amps
Operating junction temperature range @ rated VRRM and VDRM
TJ
-40 to +125
°C
Storage temperature range
Tstg
-40 to +150
°C
Lead solder temperature (<1.5mm from case, 10s max)
+230
°C
Note 1: VDRM and VRRM for all types can be applied on a continuous basis. Ratings apply for zero or negative gate voltage; however, positive gate voltage shall not be applied concurrent with negative
potential on the anode. Blocking voltages shall not be tested with a constant current source such that the voltage ratings of the devices are exceeded.
THERMAL CHARACTERISTICS
Characteristic
Thermal resistance, junction to case
Thermal resistance, junction to ambient
Symbol
RӨJC
RӨJA
Maximum
75
200
Unit
°C/W
°C/W
ELECTRICAL CHARACTERISTICS (TC 25°C, RGK = 1000Ω unless otherwise noted)
Characteristic
Symbol
Peak forward blocking current
(VD = rated VDRM @ TC = 125°C)
Peak reverse blocking current
(VR = rated VRRM @ TC = 125°C)
Forward “on” voltage(2)
ITM = 1A peak @ TA = 25°C)
IDRM
IRRM
VTM
Gate trigger current (continuous dc)(3)
(Anode voltage = 7Vdc, RL = 100 Ω)
IGT
Min. Max.
- 100
- 100
- 1.7
- 200
Unit
µA
µA
Volts
µA
Rev. 20130117
1 Page High-reliability discrete products
and engineering services since 1977
BRY55 SERIES
SILICON CONTROLLED RECTIFIER
Rev. 20130117
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ BRY55-100 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
BRY55-100 | SCRs 0.8 AMPERE RMS 30 TO 600 VOLTS | Motorola Inc |
BRY55-100 | SILICON CONTROLLED RECTIFIER | Digitron Semiconductors |