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2N3996 の電気的特性と機能

2N3996のメーカーはMicrosemiです、この部品の機能は「NPN POWER SWITCHING SILICON TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 2N3996
部品説明 NPN POWER SWITCHING SILICON TRANSISTOR
メーカ Microsemi
ロゴ Microsemi ロゴ 




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2N3996 Datasheet, 2N3996 PDF,ピン配置, 機能
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
NPN POWER SWITCHING SILICON TRANSISTOR
Qualified per MIL-PRF-19500/374
DEVICES
2N3996
2N3997
2N3998
2N3999
LEVELS
JAN
JANTX
JANTXV
ABSOLUTE MAXIMUM RATINGS (TC = +25°C unless otherwise noted)
Parameters / Test Conditions
Symbol
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current
Total Power Dissipation
@ TA = +25°C (2)
@ TC = +100°C (3)
VCEO
VCBO
VEBO
IB
IC
PT
Operating & Storage Junction Temperature Range
TJ, Tstg
Thermal Resistance, Junction-to-Case
RθJC
Note:
(1) This value applies for Tp 1.0ms, duty cycle 50%
(2) Derate linearly 11.4 mW/°C for TA > +25°C
(3) Derate linearly 300 mW/°C for TC > +100°C
Value
80
100
8.0
0.5
10 (1)
2.0
30
-65 to +200
3.33
Unit
Vdc
Vdc
Vdc
Adc
Adc
W
°C
°C/W
ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted)
Parameters / Test Conditions
Symbol Min.
OFF CHARACTERTICS
Collector-Emitter Breakdown Voltage
IC = 50mAdc
Collector-Emitter Breakdown Voltage
IC = 10µAdc
Collector-Emitter Cutoff Current
VCE = 60Vdc
Collector-Emitter Cutoff Current
VCE = 80Vdc, VBE = 0V
Emitter-Base Cutoff Current
VEB = 5.0Vdc
VEB = 8.0Vdc
V(BR)CEO
80
V(BR)CBO
100
ICEO
ICES
IEBO
Max.
10
200
200
10
Unit
Vdc
Vdc
µAdc
ηAdc
ηAdc
µAdc
TO-111
2N3996, 2N3997
TO-59
2N3998, 2N3999
T4-LDS-0165 Rev. 1 (100688)
Page 1 of 4

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2N3996 pdf, ピン配列
6 Lake Street, Lawrence, MA 01841
1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803
Website: http: //www.microsemi.com
TECHNICAL DATA SHEET
Gort Road Business Park, Ennis, Co. Clare, Ireland
Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298
PACKAGE DIMENSIONS
Ltr
CH
A1
CD
CD1
HF
PS
PS1
HT
OAH
UD
SL
SU
φT
φT1
SD
Z
Z1
Dimensions
Inches
Millimeters
Min Max Min Max
.345 .400 8.76 10.16
.250 6.35
.370 .437 9.40 11.10
.318 .380 8.08
9.65
.424 .437 10.77 11.10
.180 .215 4.57
5.46
.080 .110 2.03
2.79
.090 .140 2.29
3.56
.575 .675 14.61 17.15
.155 .189 3.94
4.80
.400 .455 10.16 11.56
.078 1.98
.040 .065 1.02
1.65
.040 .065 1.02
1.65
.190-32 UNF-2A
.002 0.05
.006 0.15
Notes
3
3
5
5
2, 6
1
7
4
8
NOTES:
1. Terminal 1, emitter; terminal 2, base; terminal 3, collector; terminal 4, case.
2. Chamfer or undercut on one or both ends of hexagonal portion is optional.
3. The outline contour with the exception of the hexagon is optional within cylinder defined by CD1 and A1.
4. Terminal r can be flattened and pierced or hook type. A visual index is required when the flattened and pierced tab
terminal contour (identical to the adjacent terminals) option is used. The case terminal (hook) is mechanically connected
to the case. The other three terminals shall be electrically isolated from the case.
5. Angular orientation of terminals with respect to hexagon is optional.
6. HT dimension does not include sealing flanges.
7. SU is the length of incomplete or undercut threads.
8. SD is the pitch diameter of coated threads. Reference: Screw threads standards for Federal Service Handbook H28, part I.
9. Dimensions are in inches.
* 10. Millimeters are giving for general information only.
* 11. In accordance with ASME Y14.5M, diameters are equivalent to φx symbology.
* FIGURE 1. Physical dimensions for transistor types 2N3996 and 2N3997 - Continued.
T4-LDS-0165 Rev. 1 (100688)
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