|
|
PDF BSS72 Data sheet ( Hoja de datos )
| Número de pieza | BSS72 | |
| Descripción | HIGH VOLTAGE TRANSISTOR | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
|
Hay una vista previa y un enlace de descarga de BSS72 (archivo pdf) en la parte inferior de esta página. Total 3 Páginas | ||
|
No Preview Available !
BSS71
BSS72
BSS73
CASE 79, STYLE 1
TO-18 (TO-206AA)
HIGH VOLTAGE TRANSISTOR
NPN SILICON
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Collector Current - Continuous
@Total Device Dissipation Ta = 25°C
Derate above 25°C
@TqTotal Device Dissipation
= 25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
Symbol
VCEO
VCBO
VEBO
ic
PD
pd
Tj. T stg
BSS BSS BSS
71 72 73
200 250 300
200 250 300
6.0
0.5
0.5
2.86
2.5
14.3
-65 to +200
Unit
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watt
mW/°C
°C
Symbol
Rfuc
Max
70
Unit
°C/W
ELECTRICAL CHARACTERISTICS (TA
Characteristic
OFF CHARACTERISTICS
25°C unless otherwise noted.
Symbol
Collector-Emitter Breakdown Voltage
dC = 10 mA, B| = 0)
Collector-Base Breakdown Voltage
dC = 100 uAdc, Ie = 0)
Emitter-Base Breakdown Voltage
(IE = 100 M Adc, Ic = 0)
Collector Cutoff Current
(V C B = 150 V, Ie = 0)
(Vcb = 200 V, Ie = 0)
(VCB = 250 V, El = 0)
Collector-Emitter Cutoff Current
(V C E = 150 V, Bl = 0)
(V C E = 200 V, Ib = 0)
(VCE = 300 V, Ib = 0)
Emitter-Cutoff Current
(VBE = 5 Vdc, cl = 0)
ON CHARACTERISTICS)!)
DC Current Gain
dC = 0.1 mA, V C E = 1 V)
dC = 1 mA, VCE = 10 V)
dC = 10 mA, Vqe = 10 V)
(IC = 30 mA, VC E = 10 V)
dC = 100 mA, Vce = 10 V)
BSS71
BSS72
BSS73
BSS71
BSS72
BSS73
BSS71
BSS72
BSS73
BSS71
BSS72
BSS73
BSS71
BSS72
BSS73
ALL
BSS71
ALL
ALL
ALL
BSS73
v (BR)CEO
v (BR)CBO
V(BR)EBO
!CB0
ICEO
'EBO
hFE
Collector-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 1 mAdc)
dC = 30 mAdc, Ib = 3 mAdc)
(IC = 50 mAdc, Ifi = 5 mAdc)
(IC = 100 mAdc, Ib = 20 mAdc)
ALL
ALL
ALL
BSS73
Base-Emitter Saturation Voltage
(IC = 10 mAdc, Ib = 1 mAdc)
(IC = 30 mAdc. Ib = 3 mAdc)
(IC = 50 mAdc, Ib = 5 mAdc)
(IC = 100 mAdc, Ib = 10 mAdc)
ALL
ALL
ALL
BSS73
Pulse Test: Pulse Width < 300 ps. Duty Cycle S 2%
VCE(sat)
VBE(sat)
200
250
300
200
250
300
20
30
50
40
—
-
Typ
40
45
120
140
35
0.15
0.25
0.35
0.25
0.7
0.8
0.85
0.9
Max
50
50
50
500
500
500
50
-
250
0.3
0.4
0.5
0.8
0.9
1.0
Vdc
Vdc
4-234
1 page | ||
| Páginas | Total 3 Páginas | |
| PDF Descargar | [ Datasheet BSS72.PDF ] | |
Hoja de datos destacado
| Número de pieza | Descripción | Fabricantes |
| BSS70 | SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS |  ETC |
| BSS70R | SOT23 PNP SILICON PLANAR MEDIUM POWER SWITCHING TRANSISTORS | ETC |
| BSS71 | Trans GP BJT NPN 200V 0.5A 3-Pin TO-18 |  New Jersey Semiconductor |
| BSS71 | SILICON PLANAR EPITAXIAL NPN TRANSISTOR |  TT |
| Número de pieza | Descripción | Fabricantes |
| SLA6805M | High Voltage 3 phase Motor Driver IC. |
 Sanken |
| SDC1742 | 12- and 14-Bit Hybrid Synchro / Resolver-to-Digital Converters. |
 Analog Devices |
|
DataSheet.es es una pagina web que funciona como un repositorio de manuales o hoja de datos de muchos de los productos más populares, |
| DataSheet.es | 2020 | Privacy Policy | Contacto | Buscar |