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2N4398 の電気的特性と機能

2N4398のメーカーはON Semiconductorです、この部品の機能は「PNP Silicon High-Power Transistors」です。


製品の詳細 ( Datasheet PDF )

部品番号 2N4398
部品説明 PNP Silicon High-Power Transistors
メーカ ON Semiconductor
ロゴ ON Semiconductor ロゴ 




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2N4398 Datasheet, 2N4398 PDF,ピン配置, 機能
ON Semiconductort
PNP Silicon High-Power
Transistors
. . . designed for use in power amplifier and switching circuits.
Low Collector–Emitter Saturation Voltage —
IC = 15 Adc, VCE(sat)
= 1.0 Vdc (Max) 2N4398,99
= 1.5 Vdc (Max) 2N5745
DC Current Gain Specified —
= 1.0 to 30 Adc
Complements to NPN 2N5301, 2N5302, 2N303
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ*MAXIMUM RATINGS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎRating
Symbol 2N4398 2N4399 2N5745 Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter–Base Voltage
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Current — Continuous
Peak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase Current — Continuous
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎPeak
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ@ TA = 25_C**
Derate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTotal Device Dissipation @ TC = 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDerate above 25_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOperating and Storage Junction
Temperature Range
VCEO
VCB
VEB
IC
IB
PD
PD
TJ, Tstg
40 60 80 Vdc
40 60 80 Vdc
5.0 Vdc
30 30 20 Adc
50 50 50
7.5 Adc
15
5.0
28.6
200
1.15
–65 to +200
Watts
mW/_C
Watts
W/_C
_C
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎTHERMAL CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
Symbol
Max Unit
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Case
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎThermal Resistance, Junction to Ambient
θJC
θJA
0.875
35
_C/W
_C/W
* Indicates JEDEC Registered Data.
** ON Semiconductor guarantees this data in addition to JEDEC Registered Data.
2N4398
2N4399
2N5745
20, 30 AMPERE
POWER TRANSISTORS
PNP SILICON
40–60–180 VOLTS
200 WATTS
CASE 1–07
TO–204AA
(TO–3)
© Semiconductor Components Industries, LLC, 2001
March, 2001 – Rev. 9
1
Publication Order Number:
2N4398/D

1 Page





2N4398 pdf, ピン配列
2N4398 2N4399 2N5745
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCharacteristic
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎOFF CHARACTERISTICS
Collector–Emitter Sustaining Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 200 mAdc, IB = 0)
2N4398
2N4399
2N5745
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = 40 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc, IB = 0)
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, IB = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
(VCE = 40 Vdc, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 60 Vdc, VBE(off) = 1.5 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VBE(off) = 1.5 Vdc)
(VCE = 30 Vdc, VBE(off) = 1.5 Vdc, TC = 150°C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCE = 80 Vdc, VBE(off) = 1.5 Vdc, TC = 150_C)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector Cutoff Current
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 40 Vdc, IE = 0)
(VCB = 60 Vdc, IE = 0)
Î ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(VCB = 80 Vdc, IE = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎEmitter Cutoff Current (VEB = 5.0 Vdc, IC = 0)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎON CHARACTERISTICS
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎDC Current Gain (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 1.0 Adc, VCE = 2.0 Vdc)
(IC = 10 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, VCE = 2.0 Vdc)
(IC = 30 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎCollector–Emitter Saturation Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =10Adc,IB =1.0Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =15Adc,IB =1.5Adc)
ÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 2.0 Adc)
(IC = 20 Adc, IB = 4.0 Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =30Adc,IB =6.0Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter Saturation Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, IB = 1.0 Adc)**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =15Adc,IB =1.5Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 20 Adc, IB = 2.0 Adc)**
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC =20Adc,IB =4.0Adc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎBase–Emitter On Voltage (1)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 10 Adc, VCE = 2.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 15 Adc, VCE = 2.0 Vdc)
(IC = 20 Adc, VCE = 4.0 Vdc)
ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ(IC = 30 Adc, VCE = 4.0 Vdc)
2N4398
2N4399
2N5745
2N4398
2N4399
2N5745
2N4398, 2N4399
2N5745
2N4398
2N4399
2N5745
All Types
2N5745
2N4398, 2N4399
2N5745
2N4398, 2N4399
2N4398, 2N4399
2N5745
2N4398, 2N4399
2N5745
2N4398, 2N4399
2N5745
2N4398, 2N4399
2N4398, 2N4399
2N5745
2N4398, 2N4399
2N5745
2N4398, 2N4399
2N5745
2N5745
2N4398, 2N4399
2N5745
2N4398, 2N4399
Symbol
VCEO(sus)
ICEO
ICEX
ICBO
IEBO
hFE
VCE(sat)
VBE(sat)
VBE(on)
Min
40
60
80
40
15
15
5.0
5.0
Max Unit
Vdc
mAdc
5.0
5.0
5.0
mAdc
5.0
5.0
5.0
10
10
mAdc
1.0
1.0
1.0
5.0 mAdc
60
60
Vdc
0.75
1.0
1.0
1.5
2.0
2.0
4.0
Vdc
1.6
1.7
1.85
2.0
2.5
2.5
Vdc
1.5
1.7
2.5
3.0
* Indicates JEDEC Registered Data.
(continued)
** ON Semiconductor Guarantees this Data in Addition to JEDEC Registered Data.
(1) Pulse Test: Pulse Width v 300 µs, Duty Cycle v 2.0%
http://onsemi.com
3


3Pages


2N4398 電子部品, 半導体
2N4398 2N4399 2N5745
RATINGS AND THERMAL DATA
100
50 100 µs 1.0 ms
20 5.0Ăms
10
5.0 2N5745
2N4398, 2N4399
dc
2.0 TJ = 200°C
Secondary Breakdown Limited
1.0
Bonding Wire Limited
Thermal Limitations TC = 25°C
0.5 Pulse Duty Cycle 10% 2N4398
0.2
0.1
1.0
2.0 3.0 5.0
2N4399
2N5745
10 20 30
50
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
100
Figure 8. Active Region Safe Operating Area
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC – VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 8 is based on TJ(pk) = 200_C; TC is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided TJ(pk)
v 200_C. TJ(pk) may be calculated from the data in
Figure 9. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
1.0
0.7
0.5 D = 0.5
0.3
0.2 0.2
0.1
0.1
0.07 0.05
0.05
0.03
0.02
0.01
0.01
0.01
0 (SINGLE PULSE)
0.02 0.05 0.1
0.2
0.5 1.0 2.0
5.0 10
t, TIME OR PULSE WIDTH (ms)
Figure 9. Thermal Response
20
STEADY STATE VALUES
θJC() = 0.875°C/W
θJC(t) = r(t) θJC()
50 100 200
500 1000
DESIGN NOTE: USE OF TRANSIENT THERMAL RESISTANCE DATA
tP
PP
t1
1/f
DUTY CYCLE, D = t1 f -
t1
tP
PEAK PULSE POWER = PP
PP
A train of periodical power pulses can be represented by
the model as shown in Figure A. Using the model and the
device thermal response, the normalized effective transient
thermal resistance of Figure 9 was calculated for various
duty cycles.
To find θJC(t), multiply the value obtained from Figure 9
by the steady state value θJC(R).
Example:
The 2N4398 is dissipating 100 watts under the following
conditions: t1 = 1.0 ms, tP = 5.0 ms. (D = 0.2)
Using Figure 9, at a pulse width of 1.0 ms and D = 0.2, the
reading of r (t) is 0.28.
The peak rise in junction temperature is therefore
T = r(t) x PP x θJC(R) = 0.28 x 100 x 0.875 = 24.5_C
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