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PDF 1N4149 Data sheet ( Hoja de datos )
| Número de pieza | 1N4149 | |
| Descripción | HIGH SPEED SWITCHING DIODE | |
| Fabricantes | EIC | |
| Logotipo |  |
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1N4149
HIGH SPEED SWITCHING DIODE
PRV : 100 Volts
Io : 150 mA
FEATURES :
* Silicon Epitaxial Planar Diode
* High reliability
* Low reverse current
* Low forward voltage drop
* High speed switching
* Pb / RoHS Free
MECHANICAL DATA :
* Case : DO-35 Glass Case
* Lead : Axial lead solderable per MIL-STD-202,
Method 208 guaranteed
* Polarity : Color band denotes cathode end
* Mounting position : Any
* Weight : 0.13 gram (approximately)
DO - 35
0.079(2.0 )max.
0.020 (0.52)max.
1.00 (25.4)
min.
0.150 (3.8)
max.
1.00 (25.4)
min.
Dimensions in inches and ( millimeters )
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25 °C ambient temperature unless otherwise specified.
Single phase, half wave, 60 Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
RATING
Maximum Repetitive Peak Reverse Voltage
Maximum Reverse Voltage
Maximum Average Forward Current
Maximum Surge Forward Current at t < 1s and Tj = 25°C
Maximum Power Dissipation , Ta = 25 °C
Maximum Forward Voltage at IF = 10 mA
Maximum Reverse Current
at VR = 75V
Maximum Reverse Recovery Time
from IF = 10mA to IR = 1mA , VR = 6V , RL = 100Ω
Junction Temperature Range
Storage Temperature Range
SYMBOL
VRRM
VR
IF(AV)
IFSM
PD
VF
IR
Trr
TJ
TSTG
VALUE
100
75
150 1)
500
500
1.0
5
4
175
- 65 to + 175
Note : 1) Valid provided that leads at a distance of 8 mm from case are kept at ambient temperature (DO-35)
UNIT
V
V
mA
mA
mW
V
nA
ns
°C
°C
Page 1 of 2
Rev. 02 : March 25, 2005
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N4149.PDF ] | |
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