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PDF 1N4150 Data sheet ( Hoja de datos )

Número de pieza 1N4150
Descripción Silicon Switching Diodes
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No Preview Available ! 1N4150 Hoja de datos, Descripción, Manual

Silicon Switching Diodes
1N4150, 1N4150-1 & 1N3600
Features
• Available in JAN, JANTX, and JANTXV per MIL-PRF-19500/231
• Metallurgically Bonded
• Hermetically Sealed
• Double Plug Construction
Maximum Ratings
Operating & Storage Temperature: -65°C to +175°C
Operating Current: 300 mA @ TA = +25°C
Derating: 2.0 mA dc/°C Above TL = + 75°C @ L = 3/8”
Surge Current A:
2A (pk) tp = 8.3 mS, VRM = 0
Surge Current B:
4A (pk) tp = 1 us, VRM = 0
Electrical Specifications @ +25 ºC (Unless Otherwise Specified)
TYPE
Number
1N3600
1N4150, -1
VBR
IR = 10 μA
V dc
75
75
VRWM
V (pk)
50
50
IR1
VR = 50 Vdc
TA = 25 °C
μA dc
0.1
0.1
IR2
VR = 50 Vdc
TA =150°C
μA dc
100
100
Forward Voltage Limits - All Types
C
IR = 0; f = 1 MHz
ac signal = 50 mV (p-P)
pF
2.5
2.5
Trr
IF = IR = 10 to 100 mA dc
RL = 100 Ω
ns
4.0
4.0
Limits
minimum
maximum
VF1
IF = 1 mA dc
V dc
0.540
0.620
VF2
IF = 10 mA dc
V dc
0.660
0.740
VF3
IF = 50 mA dc
(Pulsed)
V dc
0.760
0.860
VF4
IF = 100 mA dc
(Pulsed)
V dc
0.820
0.920
VF5
IF = 200 mA dc
(Pulsed)
V dc
0.870
1.000
Outline Drawing
0.080 MAX
2.03 DIA
POLARITY
BAND
(CATHODE)
0.018 / 0.022
0.457 / 0.559
DIA
1.000
25.400
MIN
0.175
4.44
MAX
1.000
25.400
MIN
LEADED DESIGN DATA
CASE: Hermetically sealed glass case per MIL-S-19500/231, DO – 35
LEAD MATERIAL: Copper clad steel
LEAD FINISH: Tin / Lead
THERMAL RESISTANCE: (RӨJL): 250 °C/W maximum at L = 0.375 in
THERMAL IMPEDANCE: (ZӨJX): 70 °C/W maximum
POLARITY: Cathode end is banded.
All dimensions in INCH
mm
Revision Date: 2/5/2013
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