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1N4150 の電気的特性と機能

1N4150のメーカーはWILLASです、この部品の機能は「SIGNAL DIODE」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N4150
部品説明 SIGNAL DIODE
メーカ WILLAS
ロゴ WILLAS ロゴ 




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1N4150 Datasheet, 1N4150 PDF,ピン配置, 機能
WILLAS
1N4150
SC
VO
0.1AMP Sch
1N4150 SIGNAL DIODE
Pb Free Product
Absolute Maximum Ratings (Ta=25°C)
FEATUDRimEenSsions (DO-35)
Items
Reverse Voltage
Reverse Recovery
T im e
Power Dissipation
Symbol
VR
trr
P
Ratings
50
4
500
Unit
V
ns
mW
* Extremely Low VF
* Extremely thin package
* Low stored charge
1.02(26.0)
* Majority carrier conduction
MIN.
.022(0.55)
.018(0.45)
3.33mW /°C (25°C)
Forward Current
IF
200 mA
Junction Temp.
Storage Temp.
Tj -65 to 200 °C
Tstg -65 to 200 °C
.153(3.6)
.132(3.0)
.059 (1.5)
Mechanical Data
Item s
Materials
Package
DO-35
MECHANICAL DATA
.087(2.2)
.067(1.7)
* Case:Molded plastic, JEDEC SOD-323(SC-76)
1.02(26.0)
* Terminal : Solder plated, solderaMbINle. per MIL-STD-750,
.043 (1.1)
Case
Lead/Finish
Chip
Hermetically sealed glass
Double stud/Solder Plating
Glass Passivated
Method 2026
* Polarity : Indicated by cathode band
* Mounting Position : Any
Dimensions in millimeters
.0
Electrical Characteristics (Ta=25°C)
Ratings
Breakdown Voltage
IR= 5.0uA
Peak Forward Surge Current PW = 1sec.
Maximum Forward Voltage
IF= 200mA
Maximum Reverse Current
VR= 50V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Max Reverse Recovery Time
IF= -IR= 10-200mA, to 0.1 IF
* Weight : 0.000159 ounce, 0.0045 gram
Markin
Symbol
Ratings
Unit
BV V
50
MAXIMUMIFsRurgAeTING AN1D.0 ELECTRICA AL CHAR
VF V
Rating 25oC ambient temperature unless otherw1i.s0e specified.
Single phase half waveI,R60Hz, resistive of inductive load.
uA
For capacitive load, derate current by 20% 0.10
100
ParameterC j
Conditions pF
Sy
Repetitive Peak Reverse Voltage
2.5
Continuous Reverse Votlrtarge
Forward Voltage
I F = 104mA DC
I F = 100mA DC
ns
Reverse Current
VR = 10V DC
Mean Rectifying Current
Peak forward surge current
Capacitance between terminals
Operating Temperature
Storage Temperature
T
WILLAS ELECTRONIC CORP.

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