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1N916 の電気的特性と機能

1N916のメーカーはMCCです、この部品の機能は「500mW 100 Volt Small Signal Diodes」です。


製品の詳細 ( Datasheet PDF )

部品番号 1N916
部品説明 500mW 100 Volt Small Signal Diodes
メーカ MCC
ロゴ MCC ロゴ 




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1N916 Datasheet, 1N916 PDF,ピン配置, 機能
MCC
TM
Micro Commercial Components
  omponents
20736 Marilla Street Chatsworth

  !"#
$ %    !"#
1N916(A)(B)
Features
Moisture Sensitivity: Level 1 per J-STD-020C
Low Current Leakage
Compression Bond Construction
Low Cost
Marking : Cathode band and type number
Lead Free Finish/Rohs Compliant (Note1) ("P"Suffix designates
Compliant. See ordering information)
Maximum Ratings
Operating Temperature: -55OC to +150OC
Storage Temperature: -55OC to +150OC
Maximum Thermal Resistance; 300OC/W Junction To Ambient
Electrical Characteristics @ 25OC Unless Otherwise Specified
Peak Reverse
Voltage
Average Rectified
Forward Current
Power Dissipation
Junction Temperature
Peak Forward Surge
Current
Breakdown Voltage
Maximum
Instantaneous
Forward Voltage
1N916
1N916A
1N916B
1N916B
Maximum DC
Reverse Current At
Rated DC Blocking
Voltage
Typical Junction
Capacitance
Reverse Recovery
Time
VRM
IF(AV)
PTOT
TJ
IFSM
VR
VF
IR
CT
Trr
100V
200mA
500mW
150OC
1.0A
4.0A
100
75
Pulse Width=1.0s
Pulse Width=1.0ms
IR=100uA
IR=5.0uA
1.0V
1.0V
1.0V
730mV
25nA
5.0uA
50uA
2.0pF
4.0nS
TJ = 25OC*
IFM = 10mA;
IFM = 20mA;
IFM = 20mA;
IFM = 5.0mA;
TJ=25OC, VR=20V
VR=75V,
VR=20V,
TJ=150OC
Measured at 1.0MHz,
VR=0
IF=10mA
VR = 6V, Irr=1.0mA
RL=100 OHM
Note: 1. Lead in Glass Exemption Applied, see EU Directive Annex 5.
500mW 100 Volt
Small Signal
Diodes
DO-35
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
DIM MIN MAX
A --- .166
B --- .079
C --- .020
D 1.000 ---
MM
MIN
---
---
---
25.40
MAX
4.2
2.00
.52
---
NOTE
Revision: 6
www.mccsemi.com
1 of 4
2008/02/01

1 Page





1N916 pdf, ピン配列
1N916(A)(B)
MCC
TM
Micro Commercial Components
0.90
0.85
TA = 25 oC
0.80
0.75
0 2 4 6 8 10 12
REVERSE VOLTAGE (V)
Figure 7. Total Capacitance
14
500
400
300
200
100
I
F(AV)
-
AVERAGE
RECTIFIED
CURRENT
-
mA
0
0 50 100 150
Ambient Temperature ( oC)
Figure 9. Average Rectified Current (IF(AV))
versus Ambient Temperature (T )
A
4.0
Ta = 25 oC
3.5
3.0
2.5
2.0
1.5
1.0
10 20 30 40 50
Reverse Recovery Current, I [mA]
rr
IF = 10mA - IRR = 1.0 mA - Rloop = 100 Ohms
Figure 8. Reverse Recovery Time vs
Reverse Recovery Current
60
500
400
300
200
100
0
0 50 100 150
Temperature [ oC]
Figure 10. Power Derating Curve
200
Revision: 6
www.mccsemi.com
3 of 4
2008/02/01


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