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PDF 1N914B Data sheet ( Hoja de datos )
| Número de pieza | 1N914B | |
| Descripción | SIGNAL DIODE | |
| Fabricantes | WILLAS | |
| Logotipo |  |
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Hay una vista previa y un enlace de descarga de 1N914B (archivo pdf) en la parte inferior de esta página. Total 2 Páginas | ||
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WILLAS
1N914B
SC
VO
0.1AMP Scho
1N914B SIGNAL DIODE Pb Free Product
Absolute Maximum Ratings (Ta=25°C)
FEATURES
Items
Symbol
Ratings
Unit
Dimensions (DO-35)
* Extremely Low VF
Reverse Voltage
VR
75 V * Extremely thin package
Reverse Recovery
Time
Power Dissipation
3.33mW/°C (25°C)
trr
P
4
500
ns * Low stored charge
* Majority carrier conduction
mW
1.02(26.0)
MIN.
.022(0.55)
.018(0.45)
Forward Current
IF
300 mA
Junction Temp.
Storage Temp.
Tj -65 to 175 °C
.153(3.6)
Tstg -65 to 175 °C MECHANICAL DATA.132(3.0)
.059 (1.5)
.043 (1.1)
S
.01
Mechanical Data
Items
Materials
Package
DO-35
Case
Hermetically sealed glass
Lead/Finish Double stud/Solder Plating
Chip
Glass Passivated
* Case:Molded plastic, JEDEC SOD-323(SC-76) .087(2.2)
.067(1.7)
* Terminal : Solder plated, solderable per MIL-STD-750,
Method 2026
1.02(26.0)
MIN.
* Polarity : Indicated by cathode band
* Mounting Position : Any
* Weight : 0.000159 ounce, 0.0045 gram
Unit: inch (mm)
Marking
Electrical Characteristics (Ta=25°C)
Ratings
Minimum Breakdown Voltage
IR= 5.0uA
IR= 100uA
Peak Forward Surge Current PW= 1sec.
Maximum Forward Voltage
IF= 100mA
Maximum Reverse Current
VR= 20V
VR= 75V
VR= 20V, Tj= 150°C
Maximum Junction Capacitance
VR= 0, f= 1 MHz
Maximum Reverse Recovery Time
IF= 10mA, VR= 6V, IRR= 1mA, RL= 100Ω
MAXIMUMSyRmAboTl ING ANRaDtinEgsLECTRICUAnitL CHARA
BV V
Rating 25oC ambient temperature unless otherwis7e5specified.
Single phase half wave, 60Hz, resistive of induct1iv0e 0load.
For capacitive load, dIeFrastue rcgurerent by 20%
0.5
A
Parameter VF
Repetitive Peak Reverse Voltage
Continuous Reverse VoltIaRge
Forward Voltage
Reverse Current
Cj
Mean Rectifying Current
Peak forward surge curretnrtr
Capacitance between terminals
Operating Temperature
Conditions
1.0
IF=
100.m0A2D5C
5.0
I F = 1005m0A DC
VR = 10V DC
4
4
V
uA
pF
ns
Sym
V
V
V
V
IF
C
T
Storage Temperature
TS
WILLAS ELECTRONIC CORP.
1 page | ||
| Páginas | Total 2 Páginas | |
| PDF Descargar | [ Datasheet 1N914B.PDF ] | |
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