|
|
1N914BのメーカーはMCCです、この部品の機能は「500mW 100 Volt Silicon Epitaxial Diodes」です。 |
部品番号 | 1N914B |
| |
部品説明 | 500mW 100 Volt Silicon Epitaxial Diodes | ||
メーカ | MCC | ||
ロゴ | |||
このページの下部にプレビューと1N914Bダウンロード(pdfファイル)リンクがあります。 Total 3 pages
MCC
omponents
21201 Itasca Street Chatsworth
!"#
$
% !"#
1N914(A)(B)
)HDWXUHV
• Low Current Leakage
• Compression Bond Construction
• Low Cost
500mW 100 Volt
Silicon Epitaxial
Diodes
0D[LPXP5DWLQJV
• Operating Temperature: -55OC to +150OC
• Storage Temperature: -55OC to +150OC
• Maximum Thermal Resistance; 300OC/W Junction To Ambient
Electrical Characteristics @ 25OC Unless Otherwise Specified
Maximum Repetitive
Reverse Voltage
Average Rectified
Forward Current
Power Dissipation
Junction Temperature
Peak Forward Surge
Current
VRRM
IO
PD
TJ
IFSM
100V
200mA
500mW
150OC
1.0A
4.0A
Minimum Breakdown
Voltage
VR
100V
75V
Maximum
Instantaneous
Forward Voltage
1N914
1N914 A
VF 1.0V
1N914 B
1N914 B
720mV
Maximum Reverse
25nA
Current
IR
5.0uA
50uA
Typical Junction
Capacitance
CJ 4.0pF
Reverse Recovery
Time
Trr 4.0nS
*Pulse test: Pulse width 300 usec, Duty cycle 2%
Pulse Width=1.0
second
Pulse Width=1.0
microsecond
IR=100uA,
IR=5.0uA
TJ = 25OC
IFM = 10mA;
IFM = 20mA;
IFM = 100mA;
IFM = 5.0mA;
VR=20V, TJ=25OC,
VR=75V, TJ=25OC,
VR=20V, TJ=150OC
Measured at 1.0MHz,
VR=0V
IF=10mA
VR = 6V
RL=100 Ù, Irr=1.0mA
DO-35
D
A
Cathode
Mark
B
D
C
DIMENSIONS
INCHES
MM
DIM
MIN
MAX
MIN
A --- .166 ---
B --- .079 ---
C --- .020 ---
D 1.000 --- 25.40
MAX
4.2
2.00
.52
---
NOTE
www.mccsemi.com
1 Page 1N914(A)(B)
MCC
Figure 4
Typical Reverse Characteristics
1000
600
400
200
100
60
40
20
10
NanoAmp
6
4
2
1
.6
.4
Figure 5
Peak Forward Surge Current
1200
1000
800
600
MilliAmps
400
200
0
12
4 6 8 10 20
Cycles
40 60 80100
Peak Forward Surge Current - Amperes versus
Number Of Cycles At 60Hz - Cycles
.2
.1
20 40 60 80 100 120 140
TJ
Instantaneous Reverse Leakage Current - NanoAmperes
versus Junction Temperature -OC
www.mccsemi.com
3Pages | |||
ページ | 合計 : 3 ページ | ||
|
PDF ダウンロード | [ 1N914B データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N914 | High-speed diode | NXP Semiconductors |
1N914 | Fast Switching Diodes | Vishay Telefunken |
1N914 | SILICON EPITAXIAL PLANAR DIODE | Semtech Corporation |
1N914 | SWITCHING DIODE | Compensated Deuices Incorporated |