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PDF 2N4340 Data sheet ( Hoja de datos )
| Número de pieza | 2N4340 | |
| Descripción | N-CHANNEL JFET | |
| Fabricantes | Motorola Semiconductors | |
| Logotipo |  |
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MAXIMUM RATINGS
Rating
Drain-Source Voltage
Drain-Gate Voltage
Gate-Source Voltage
Reverse Gate-Source Voltage
Gate Current
@Total Device Dissipation Ta = 25°C
Derate above 25°C
Storage Temperature Range
Symbol
vDs
Vdg
vgs
vgsr
lG
pd
Tstg
Value
50
50
50
50
50
300
2.0
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
mA
mW
mW/°C
°C
2N4338
2N4339
2N4340
2N4341
CASE 22-03, STYLE 3
TO-18 (TO-206AA)
JFET
LOW-FREQUENCY, LOW NOISE
—N-CHANNEL DEPLETION
ELECTRICAL CHARACTERISTICS (Ta = 25°C unless otherwise noted.)
OFF CHARACTERISTICS
Characteristic
Gate-Source Breakdown Voltage
<|Q = -1.0 (iA)
Gate Reverse Current
(VQS = -30 V)
Gate Source Cutoff Voltage
(VDS = 15 V, tp = 0.1 nA)
ON CHARACTERISTICS
2N4338
2N4339
2N4340
2N4341
Zero-Gate-Voltage Drain Current
(VDS = 15 V)
SMALL-SIGNAL CHARACTERISTICS
2N4338
2N4339
2N4340
2N4341
Forward Transfer Admittance
<VD s = 15 V, f = 1.0 kHz)
2N4338
2N4339
2N4340
2N4341
Output Admittance
(V DS = 15 V, f = 1.0 kHz)
2N4338
2N4339
2N4340
2N4341
Input Capacitance
(Vqs = 15V„f = 1.0 MHz)
Reverse Transfer Capacitance
(VDS = 15 V, f = 1.0 MHz)
FUNCTIONAL CHARACTERISTICS
Noise Figure
(VpS = 15 Volts, f
1.0 kHz, R G = 1.0 Mli)
•Pulse Test: Pulse Width «s 630 msec, Duty Cycle « 10%.
Symbol
V (BR)GSS
!GSS
v GS(off)
bSS*
Min
50
—
-0.3
-0.6
-1.0
-2.0
0.2
0.5
1.2
3.0
lYfsl*
lyosl
Ciss
Crss
600
800
1300
2000
—
—
—
Max
-
0.1
-1.0
-1.8
-3.0
-6.0
0.6
1.5
3.6
9.0
Unit
Vdc
nA
Vdc
mA
1800
2400
3000
4000
5.0
15
30
60
6.0
2.0
jtimhos
/xmhos
PF
PF
1.0 dB
6-27
1 page | ||
| Páginas | Total 1 Páginas | |
| PDF Descargar | [ Datasheet 2N4340.PDF ] | |
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