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Datasheet 2N4340 PDF ( 特性, スペック, ピン接続図 )

部品番号 2N4340
部品説明 N-Channel JFET
メーカ Siliconix
ロゴ Siliconix ロゴ 
プレビュー
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2N4340 Datasheet, 2N4340 PDF,ピン配置, 機能
N-Channel JFETs
2N4338/4339/4340/4341
Product Summary
Part Number
2N4338
2N4339
2N4340
2N4341
VGS(off) (V)
–0.3 to –1
–0.6 to –1.8
–1 to –3
–2 to –6
V(BR)GSS Min (V) gfs Min (mS) IDSS Max (mA)
–50 0.6 0.6
–50 0.8 1.5
–50 1.3 3.6
–50 2 9
Features
D Low Cutoff Voltage: 2N4338 <1 V
D High Input Impedance
D Very Low Noise
D High Gain: AV = 80 @ 20 mA
Benefits
D Full Performance from Low-Voltage
Power Supply: Down to 1 V
D Low Signal Loss/System Error
D High System Sensitivity
D High-Quality Low-Level Signal
Amplification
Applications
D High-Gain, Low-Noise Amplifiers
D Low-Current, Low-Voltage
Battery-Powered Amplifiers
D Infrared Detector Amplifiers
D Ultrahigh Input Impedance
Pre-Amplifiers
Description
The 2N4338/4339/4340/4341 n-channel JFETs are
designed for sensitive amplifier stages at low- to
mid-frequencies. Low cut-off voltages accommodate
low-level power supplies and low leakage for improved
system accuracy.
The TO-206AA (TO-18) package is hermetically sealed
and suitable for military processing (see Military
Information). For similar products in TO-226AA (TO-92)
and TO-236 (SOT-23) packages, see the J/SST201 series
data sheet.
TO-206AA
(TO-18)
S
1
2
D
3
Top View
G and Case
Absolute Maximum Ratings
Gate-Source/Gate-Drain Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . –50 V
Forward Gate Current . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 50 mA
Storage Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . –65 to 200_C
Operating Junction Temperature . . . . . . . . . . . . . . . . . . . . –55 to 175_C
Lead Temperature (1/16” from case for 10 sec.) . . . . . . . . . . . . . . . 300_C
Power Dissipationa . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 300 mW
Notes
a. Derate 2 mW/_C above 25_C
Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70240.
Applications information may also be obtained via FaxBack, request document #70595 and #70599.
Siliconix
P-37408—Rev. D, 04-Jul-94
1

1 Page



2N4340 pdf, ピン配列
2N4338/4339/4340/4341
Specificationsa for 2N4340 and 2N4341
Parameter
Symbol
Test Conditions
Limits
2N4340
2N4341
Typb Min Max Min Max Unit
Dynamic
Common-Source
Forward Transconductance
Common-Source
Output Conductance
Drain-Source On-Resistance
Common-Source
Input Capacitance
Common-Source
Reverse Transfer Capacitance
gfs
gos
rds(on)
Ciss
Crss
VDS = 15 V, VGS = 0 V, f = 1 kHz
VDS = 0 V, VGS = 0 V, f = 1 kHz
VDS = 15 V, VGS = 0 V, f = 1 MHz
1.3 3
2
30
1500
57
1.5 3
Equivalent Input Noise Voltaged
en
VDS = 10 V, VGS = 0 V, f = 1 kHz
6
Noise Figure
NF
VDS = 15 V, VGS = 0 V
f = 1 kHz, RG = 1 MW
Notes
a. TA = 25_C unless otherwise noted.
b. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing.
c. Pulse test: PW v300 ms, duty cycle v3%.
d. This parameter not registered with JEDEC.
1
4 mS
60 mS
800 W
7
pF
3
nV
Hz
1 dB
NPA
Typical Characteristics
Drain Current and Transconductance
10 vs. Gate-Source Cutoff Voltage 5
IDSS @ VDS = 10 V, VGS = 0 V
gfs @ VDS = 10 V, VGS = 0 V
8 f = 1 kHz
4
6
gfs
4
IDSS
3
2
21
00
0 –1 –2 –3 –4 –5
VGS(off) – Gate-Source Cutoff Voltage (V)
10 nA
1 nA
Gate Leakage Current
ID = 100 mA
TA = 125_C
500 mA
100 pA
10 pA
1 pA
TA = 25_C
IGSS @ 125_C
500 mA
ID = 100 mA
IGSS @ 25_C
0.1 pA
0
6 12 18 24
VDG – Drain-Gate Voltage (V)
30
Siliconix
P-37408—Rev. D, 04-Jul-94
3


3Pages


2N4340 電子部品, 半導体
2N4338/4339/4340/4341
Typical Characteristics (Cont’d)
Common-Source Input Capacitance
vs. Gate-Source Voltage
10
f = 1 MHz
8
6
VDS = 0 V
4
10 V
2
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Output Conductance vs. Drain Current
3
VGS(off) = –1.5 V
VDS = 10 V
f = 1 kHz
2.4
1.8
0.8
0.4
0
0.01
TA = –55_C
25_C
125_C
0.1
ID – Drain Current (mA)
1
Common-Source Reverse Feedback
Capacitance vs. Gate-Source Voltage
5
f = 1 MHz
4
3
VDS = 0 V
2
1 10 V
0
0 –4 –8 –12 –16 –20
VGS – Gate-Source Voltage (V)
Equivalent Input Noise Voltage vs. Frequency
20
VDS = 10 V
16
12 ID = 100 mA
8
ID = IDSS
4
0
10
100 1 k 10 k
f – Frequency (Hz)
100 k
6 Siliconix
P-37408—Rev. D, 04-Jul-94

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