DataSheet.jp

2N4235 の電気的特性と機能

2N4235のメーカーはMotorola Semiconductorsです、この部品の機能は「POWER TRANSISTOR」です。


製品の詳細 ( Datasheet PDF )

部品番号 2N4235
部品説明 POWER TRANSISTOR
メーカ Motorola Semiconductors
ロゴ Motorola Semiconductors ロゴ 




このページの下部にプレビューと2N4235ダウンロード(pdfファイル)リンクがあります。

Total 5 pages

No Preview Available !

2N4235 Datasheet, 2N4235 PDF,ピン配置, 機能
MAXIMUM RATINGS
Rating
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Base Voltage
Base Current
Collector Current Continuous
Total Device Dissipation (a Ta =
25°C
Derate above 25°C
Total Device Dissipation (a Tq =
25°C
Derate above 25°C
Operating and Storage Junction
Temperature Range
Symbol 2N4234 2N4235 2N4236
VCEO
40
60
80
VCBO
40
60
80
VEBO
7.0
IB 0.2
•c 1.0
3.0*
PD
1.0
5.7
PD
TJ- Tstg
6.0
34
- 65 to + 200
Unit
Vdc
Vdc
Vdc
Vdc
Adc
Watt
mW/°C
Watts
mW/X
°C
THERMAL CHARACTERISTICS
Characteristic
|
Thermal Resistance, Junction to Case
J
Symbol
Rajc
Max
29
Unit
°C/W
2N4234
2N4235
2N4236
CASE 079-02, STYLE 1
TO-39 (TO-205AD)
POWER TRANSISTOR
PNP SILICON
ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted.)
Characteristic
OFF CHARACTERISTICS
Collector-Emitter Sustaining Voltaged)
C(l = 100 mAdc, Bl = 0)
2N4234
2N4235
2N4236
Collector Cutoff Current
(Vce = 30 Vdc, Bl = 0)
(Vce = 40 Vdc, Ib = 0)
(Vce = 60 Vdc, Ib = 0)
Collector Cutoff Current
(Vce = 40 Vdc, V B E = 1-5 Vdc)
(VC E = 60 Vdc, V B e = 1-5 Vdc)
(Vce = 80 Vdc, V B e = 1-5 Vdc)
(Vce = 30 Vdc, V B E = 1-5 Vdc, TC = 150°C)
(Vce = 40 vdc, v B e = i-5 vdc, Tc = i50°o
(Vce = 60 Vdc, V B E = 1-5 Vdc, Tc = 150°C)
Collector Cutoff Current
(Vcb = 40 Vdc, = 0)
(Vcb = 60 Vdc, = 0)
(VC B = 80 Vdc, = 0)
Emitter Cutoff Current
(V B E = 1 Vdc, lc = 0)
ON CHARACTERISTICS
DC Current Gaind)
c(l = 100 mAdc, Vce = Vdc)
(lC = 250 mAdc, VC e = 10 Vdc)
(lC = 500 mAdc, Vce = 10 Vdc)
(lC = 1.0 Adc, Vce = 1.0 Vdc)
Collector-Emitter Saturation Voltaged)
(lC = 1.0 Adc, Ib = 125 mAdc)
Base-Emitter Saturation Voltaged)
(lC = 1.0 Adc, Ib = 100 mAdc)
Base-Emitter On Voltage
(lC = 250 mAdc, V C E = 1-0 Vdc)
SMALL-SIGNAL CHARACTERISTICS
Current-Gain Bandwidth Product
(lC = 100 mAdc, VC e = 10 Vdc, f = 1.0 MHz)
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
2N4234
2N4235
2N4236
Symbol
VcEO(sus)
'CEO
ICEX
40
60
80
-
-
'CBO
lEBO
-
hFE
VcE(sat)
VBE(sat)
vbe
h
40
30
20
10
3.0
Max
1.0
1.0
1.0
0.1
0.1
0.1
1.0
1.0
1.0
0.1
0.1
0.1
0.5
Vdc
mAdc
mAdc
mAdc
mAdc
150
0.6 Vdc
1.5 Vdc
1.0 Vdc
MHz
4-155

1 Page





2N4235 pdf, ピン配列
2N4234, 2N4235, 2N4236
LARGE SIGNAL CHARACTERISTICS
FIGURE 3 -TRANSCONDUCTANCE
1000
700 VCE -
500
300 - 55°C -
'OFF" REGION CHARACTERISTICS
FIGURE 5 -TRANSCONDUCTANCE
III!VCE = 40 V
=—h C
175 C
/
QC
I 100
2
do 70
30
20
10
Tj = +25 C
= +l( K)°C-
I
j
/
/
/
Tj = H-175°C
/
,-
/
02 0.4
I
06
0.8
V»e, BASE-EMITTER VOLTAGE (VOLTS)
1.0
12
0.05
002
/
Tj - +100°C /
I
J
/
/
Tj - +75 K- /t=
-«- EVE SE- -FORWARD-*-
/
0.01
0.2
1
1 0.2 0.3 0.4
V«. BASE EMITTER VOLTAGE (VOLTS)
0.5 0.6
FIGURE 4 -INPUT ADMITTANCE
100
50 Vce = 2V
2U
/t j - _ 55°C
10
2.U
Tj = +1 00°Ci
1.0
- Tj = +25°C
U.b
U.2
ni
005
j= + 175°C
0.2 04 0.6
08
V,e, BASE-EMITTER VOLTAGE (VOLTS)
I
1.0
1.2
FIGURE 6 -EFFECTS OF BASE EMITTER RESISTANCE
75 100 125
Tj, JUNCTION TEMPERATURE (°C!
4-157


3Pages





ページ 合計 : 5 ページ
 
PDF
ダウンロード
[ 2N4235 データシート.PDF ]


データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。


共有リンク

Link :


部品番号部品説明メーカ
2N4231

COMPLEMENTARY SILICON MEDIUM-POWER TRANSISTORS

Boca Semiconductor Corporation
Boca Semiconductor Corporation
2N4231

Bipolar NPN Device in a Hermetically sealed TO66 Metal Package

Seme LAB
Seme LAB
2N4231

Trans GP BJT NPN 40V 5A 3-Pin(2+Tab) TO-66

New Jersey Semiconductor
New Jersey Semiconductor
2N4231A

POWER TRANSISTORS(5A/75W)

Mospec Semiconductor
Mospec Semiconductor


www.DataSheet.jp    |   2020   |  メール    |   最新    |   Sitemap