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MBR30150PT の電気的特性と機能

MBR30150PTのメーカーはThinki Semiconductorです、この部品の機能は「30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers」です。


製品の詳細 ( Datasheet PDF )

部品番号 MBR30150PT
部品説明 30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers
メーカ Thinki Semiconductor
ロゴ Thinki Semiconductor ロゴ 




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MBR30150PT Datasheet, MBR30150PT PDF,ピン配置, 機能
MBR3035PT thru MBR30200PT
®
Pb Free Plating Product
MBR3035PT thru MBR30200PT
Pb
30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers
FEATURES
• Plastic package has Underwriters Laboratory
Flammability Classification 94V-O.
Flame Retardant Epoxy Molding Compound.
• Metal silicon junction, majority carrier conduction
• Low power loss, high efficiency.
• High current capability
• Guardring for overvoltage protection
• For use in low voltage,high frequency inverters
free wheeling , and polarlity protection applications.
• In compliance with EU RoHS 2002/95/EC directives
MECHANICAL DATA
• Case: TO-247AD/TO-3P molded plastic
• Terminals: solder plated, solderable per MIL-STD-750, Method 2026
• Polarity: As marked.
• Mounting Position: Any
• Weight: 0.2245 ounces, 6.3673 grams.
0.640(16.25)
0.620(15.75)
0.142(3.60)
0.125(3.20)
0.087(2.20)
0.070(1.80)
0.126(3.20)
0.110(2.80)
0.050(1.25)
0.045(1.15)
0.225(5.70)
0.204(5.20)
0.225(5.70)
0.204(5.20)
0.199(5.05)
0.175(4.45)
0.095(2.40)
0.030(0.75)
0.017(0.45)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS (TA=25unless otherwise noted)
MBR MBR MBR MBR MBR MBR MBR MBR
PARAMETER
SYMBOL 3035 3045 3050 3060 3090 30100 30150 30200
Maximum repetitive peak reverse voltage
Maximum RMS voltage
Maximum DC blocking voltage
Maximum average forward rectified current
Peak repetitive forward current
(Rated VR, Square wave, 20KHz)
VRRM
VRMS
VDC
IF(AV)
IFRM
PT PT PT PT PT PT PT PT
35 45 50 60 90 100 150 200
24 31 35 42 63 70 105 140
35 45 50 60 90 100 150 200
30
30
Peak forward surge current, 8.3 ms single half sine-wave
superimposed on rated load
IFSM
200
Peak repetitive reverse surge Current (Note 1)
IRRM
2
1
Maximum instantaneous forward voltage (Note 2)
IF=15A, TJ=25
IF=15A, TJ=125
IF=30A, TJ=25
IF=30A, TJ=125
-
0.75
0.85
0.95 1.05
VF 0.60 0.65 0.75 0.92 -
0.82 -
- 1.02 1.10
0.73 -
- 0.98 -
Maximum reverse current @ rated VR TJ=25
TJ=125
1
IR 20
15
0.5
10
0.1
Voltage rate of change,(Rated VR)
Typical thermal resistance
Operating junction temperature range
Storage temperature range
Note 1: 2.0μs Pulse Width, f=1.0KHz
dV/dt
RθJC
TJ
TSTG
10,000
1.4
- 55 to +150
- 55 to +150
Note 2: Pulse Test : 300μs Pulse Width, 1% Duty Cycle
UNIT
V
V
V
A
A
A
A
V
mA
V/μs
OC/W
OC
OC
Rev.05
© 2006 Thinki Semiconductor Co., Ltd.
Page 1/2
http://www.thinkisemi.com/

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共有リンク

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部品番号部品説明メーカ
MBR30150PT

30.0 Ampere Dual Common Cathode Schottky Barrier Rectifiers

Thinki Semiconductor
Thinki Semiconductor
MBR30150PT

Power Schottky Rectifier

MCC
MCC
MBR30150PT

(MBR3035PT - MBR30150PT) Schottky Barrier Rectifiers

Taiwan Semiconductor
Taiwan Semiconductor
MBR30150PT

Wide Temperature Range and High Tjm Schottky Barrier Rectifiers

Sirectifier
Sirectifier


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