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1N3893のメーカーはGeneSiCです、この部品の機能は「Silicon Fast Recovery Diode」です。 |
部品番号 | 1N3893 |
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部品説明 | Silicon Fast Recovery Diode | ||
メーカ | GeneSiC | ||
ロゴ | |||
このページの下部にプレビューと1N3893ダウンロード(pdfファイル)リンクがあります。 Total 3 pages
Silicon Fast
Recovery Diode
Features
• High Surge Capability
• Types up to 400 V VRRM
• Not ESD Sensitive
Note:
1. Standard polarity: Stud is cathode.
2. Reverse polarity (R): Stud is anode.
3. Stud is base.
1N3889 thru 1N3893R
VRRM = 50 V - 400 V
IF = 12 A
DO-4 Package
Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed)
Parameter
Symbol
Conditions
1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit
Repetitive peak reverse
voltage
RMS reverse voltage
DC blocking voltage
Continuous forward current
VRRM
VRMS
VDC
IF
TC ≤ 100 °C
50 100 200 300 400 V
35 70 140 280 420 V
50 100 200 400 600 V
12 12 12 12 12 A
Surge non-repetitive forward
current, Half Sine Wave
Operating temperature
Storage temperature
IF,SM TC = 25 °C, tp = 8.3 ms
90
90
90
90 90
Tj -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
Tstg -55 to 150 -55 to 150 -55 to 150 -55 to 150 -55 to 150
A
°C
°C
Electrical characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
1N3889 (R) 1N3890 (R) 1N3891 (R) 1N3892 (R) 1N3893 (R) Unit
Diode forward voltage
Reverse current
VF IF = 12 A, Tj = 25 °C
1.4
1.4
1.4
1.4
1.4 V
IR
VR = 50 V, Tj = 25 °C
VR = 50 V, Tj = 150 °C
25
6
25
6
25
6
25 25 μA
6 6 mA
Recovery Time
Maximum reverse recovery
time
TRR
IF=0.5 A, IR=1.0 A,
IRR= 0.25 A
200
200
200
200 200 nS
Thermal characteristics
Thermal resistance, junction
- case
RthJC
2.0 2.0 2.0 2.0 2.0 °C/W
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
1
1 Page 1N3889 thru 1N3893R
Package dimensions and terminal configuration
Product is marked with part number and terminal configuration.
M DO- 4 (DO-203AA)
J
P
D
G
B
N
E
F
C
A
Inches
Millimeters
Min
A
B 0.424
C -----
D ------
E 0.453
F 0.114
G -----
J -----
M -----
N 0.031
P 0.070
Max Min
10-32 UNF
0.437
10.77
0.505
-----
0.800
-----
0.492
11.50
0.140
2.90
0.405
-----
0.216
-----
φ0.302
-----
0.045
0.80
0.79 1.80
Max
11.10
12.82
20.30
12.50
3.50
10.29
5.50
φ7.68
1.15
2.00
Feb 2016
Latest version of this datasheet at: www.genesicsemi.com/silicon-products/fast-recovery-rectifiers/
3
3Pages | |||
ページ | 合計 : 3 ページ | ||
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PDF ダウンロード | [ 1N3893 データシート.PDF ] |
データシートを活用すると、その部品の主な機能と仕様を詳しく理解できます。 ピン構成、電気的特性、動作パラメータ、性能を確認してください。 |
部品番号 | 部品説明 | メーカ |
1N3890 | FAST RECOVERY RECTIFIER | Digitron Semiconductors |
1N3890 | FAST RECOVERY DIODES | International Rectifier |
1N3890 | FAST RECOVERY RECTIFIERS | Microsemi |
1N3890 | Silicon Fast Recovery Diode | GeneSiC |