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BCX18LT1GのメーカーはON Semiconductorです、この部品の機能は「General Purpose Transistors」です。 |
部品番号 | BCX18LT1G |
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部品説明 | General Purpose Transistors | ||
メーカ | ON Semiconductor | ||
ロゴ | |||
このページの下部にプレビューとBCX18LT1Gダウンロード(pdfファイル)リンクがあります。 Total 4 pages
BCX17LT1G, PNP
BCX18LT1G, PNP
BCX19LT1G, NPN
SBCX19LT1G, NPN
General Purpose
Transistors
Voltage and Current are Negative for
PNP Transistors
Features
• S and NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating
Symbol
Value
Unit
Collector − Emitter Voltage
BCX17, BCX19
BCX18
VCEO
Vdc
45
25
Collector − Base Voltage
BCX17, BCX19
BCX18
VCBO
Vdc
50
30
Emitter − Base Voltage
Collector Current − Continuous
THERMAL CHARACTERISTICS
Characteristic
VEBO
IC
Symbol
5.0
500
Max
Vdc
mAdc
Unit
Total Device Dissipation FR− 5 Board
(Note 1), TA = 25°C
Derate above 25°C
PD
225 mW
1.8 mW/°C
Thermal Resistance,
Junction−to−Ambient
Total Device Dissipation Alumina
Substrate, (Note 2) TA = 25°C
Derate above 25°C
RqJA
PD
556 °C/W
300 mW
2.4 mW/°C
Thermal Resistance,
Junction−to−Ambient
RqJA
417 °C/W
Junction and Storage Temperature
TJ, Tstg − 55 to +150
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR− 5 = 1.0 0.75 0.062 in.
2. Alumina = 0.4 0.3 0.024 in 99.5% alumina.
www.onsemi.com
SOT−23
(TO−236)
CASE 318−08
STYLE 6
PNP
COLLECTOR
3
1
BASE
2
EMITTER
NPN
COLLECTOR
3
1
BASE
2
EMITTER
MARKING DIAGRAM
XX M G
G
1
XX = T1, T2 or U1
M = Date Code*
G = Pb−Free Package
(Note: Microdot may be in either location)
*Date Code orientation and/or overbar may
vary depending upon manufacturing location.
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
© Semiconductor Components Industries, LLC, 1994
November, 2016 − Rev. 9
1
Publication Order Number:
BCX17LT1/D
1 Page BCX17LT1G, PNP BCX18LT1G, PNP BCX19LT1G, NPN SBCX19LT1G, NPN
1000
VCE = 1 V
TJ = 25°C
100
10
0.1
1.0 10 100
IC, COLLECTOR CURRENT (mA)
1000
Figure 1. DC Current Gain
1.0
TJ = 25°C
0.8
0.6
0.4 IC = 10 mA 100 mA 300 mA
500 mA
0.2
0
0.01
0.1 1 10
IB, BASE CURRENT (mA)
Figure 2. Saturation Region
100
1.0
TA = 25°C
0.8
0.6
VBE(sat) @ IC/IB = 10
VBE(on) @ VCE = 1 V
0.4
0.2
VCE(sat) @ IC/IB = 10
0
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 3. “On” Voltages
+1
qVC for VCE(sat)
0
-1
100
10
-2 qVB for VBE
1 10 100 1000
IC, COLLECTOR CURRENT (mA)
Figure 4. Temperature Coefficients
1
0.1
Cib
Cob
1 10
VR, REVERSE VOLTAGE (VOLTS)
Figure 5. Capacitances
100
www.onsemi.com
3
3Pages | |||
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BCX18LT1G | General Purpose Transistors | ON Semiconductor |